10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes

标题
10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 6, Pages 808-811
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2021-05-01
DOI
10.1109/led.2021.3076802

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