High conductive gate leakage current channels induced by In segregation around screw- and mixed-type threading dislocations in lattice-matched InxAl1−xN/GaN heterostructures

Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes

(2010) D. Donoval et al.   APPLIED PHYSICS LETTERS

Role of c-screw dislocations on indium segregation in InGaN and InAlN alloys

(2010) Huaping Lei et al.   APPLIED PHYSICS LETTERS

Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

(2010) W. Chikhaoui et al.   APPLIED PHYSICS LETTERS

Strain effects on InxAl1−xN crystalline quality grown on GaN templates by metalorganic chemical vapor deposition

(2010) Z. L. Miao et al.   JOURNAL OF APPLIED PHYSICS

Leakage current by Frenkel–Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures

(2009) Engin Arslan et al.   APPLIED PHYSICS LETTERS

The origin and evolution of V-defects in InxAl1−xN epilayers grown by metalorganic chemical vapor deposition

(2009) Z. L. Miao et al.   APPLIED PHYSICS LETTERS

Influence of ultrathin AlN interlayer on the microstructure and the electrical transport properties of AlxGa1−xN/GaN heterostructures

(2009) J. Song et al.   JOURNAL OF APPLIED PHYSICS