期刊
IEEE TRANSACTIONS ON POWER ELECTRONICS
卷 29, 期 6, 页码 2634-2637出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2013.2284248
关键词
Efficiency; GaN; high frequency; high voltage; power device; semiconductor; wide band gap
kV-class GaN high electron mobility transistors built on low-cost Si substrate have been developed with proven switching performance. These devices show a blocking voltage >1200 V, low on-resistance <0.19 Omega, and high switching speed >200 V/ns. A 3-kW 400 V:800 V hard-switched boost converter based on the GaN transistor achieves 99% efficiency at 100 kHz, well exceeding that of other competing semiconductors.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据