期刊
IEEE ELECTRON DEVICE LETTERS
卷 31, 期 1, 页码 11-13出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2009.2035145
关键词
AlInN; GaN; high-electron-mobility transistor (HEMT); metal-organic chemical vapor deposition
资金
- European Commission [006903]
High-frequency high-electron-mobility transistors (HEMTs) were fabricated on AlInN/AlN/GaN heterostructures grown by low-pressure metal-organic chemical vapor deposition on a SiC substrate. The results presented in this letter confirm the high performance that is reachable by AlInN-based technology with an output power of 10.3 W/mm and a power-added efficiency of 51% at 10 GHz with a gate length of 0.25 mu m. A good extrinsic transconductance value that is greater than 450 mS/mm and exceeding AlGaN/GaN HEMT results was also measured on these transistors. To our knowledge, these results are the best power results published on AlInN/GaN HEMTs. These good results were attributed to optimized heterostructure properties associated with low-resistance ohmic contacts and an effective passivation layer minimizing drain current slump in high-frequency operations.
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