Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x /TiO x /TiN Structure

Improved resistive switching phenomena and mechanism using Cu-Al alloy in a new Cu:AlOx/TaOx/TiN structure

(2015) S. Roy et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Oxygen vacancy and hole conduction in amorphous TiO2

(2015) Hieu H. Pham et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Resistive switching phenomena in TiOx nanoparticle layers for memory applications

(2014) Emanuelle Goren et al.   APPLIED PHYSICS LETTERS

Improvement of resistive switching performances via an amorphous ZrO2 layer formation in TiO2-based forming-free resistive random access memory

(2014) Baiwen Zeng et al.   JOURNAL OF APPLIED PHYSICS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

A Cu/ZnO Nanowire/Cu Resistive Switching Device

(2014) Lijie Li et al.   Nano-Micro Letters

Hydrothermal Preparation and White-Light-Controlled Resistive Switching Behavior of BaWO4 Nanospheres

(2014) Bai Sun et al.   Nano-Micro Letters

TaOx-based resistive switching memories: prospective and challenges

(2013) Amit Prakash et al.   Nanoscale Research Letters

ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels

(2012) Katsumasa Kamiya et al.   APPLIED PHYSICS LETTERS

Properties of amorphous and crystalline titanium dioxide from first principles

(2012) Binay Prasai et al.   JOURNAL OF MATERIALS SCIENCE

High Uniformity of Resistive Switching Characteristics in a Cr/ZnO/Pt Device

(2012) Wen-Yuan Chang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

New Set/Reset Scheme for Excellent Uniformity in Bipolar Resistive Memory

(2011) Jubong Park et al.   IEEE ELECTRON DEVICE LETTERS

Forming-Free $\hbox{TiO}_{2}$-Based Resistive Switching Devices on CMOS-Compatible W-Plugs

(2011) C. Hermes et al.   IEEE ELECTRON DEVICE LETTERS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices

(2010) Hu Young Jeong et al.   ADVANCED FUNCTIONAL MATERIALS

Direct Identification of the Conducting Channels in a Functioning Memristive Device

(2010) John Paul Strachan et al.   ADVANCED MATERIALS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode

(2008) Wan Shen et al.   APPLIED PHYSICS LETTERS

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology