Effects of Ti Buffer Layer on Retention and Electrical Characteristics of Cu-Based Conductive-Bridge Random Access Memory (CBRAM)

标题
Effects of Ti Buffer Layer on Retention and Electrical Characteristics of Cu-Based Conductive-Bridge Random Access Memory (CBRAM)
作者
关键词
-
出版物
ECS Solid State Letters
Volume 3, Issue 10, Pages P120-P122
出版商
The Electrochemical Society
发表日期
2014-07-31
DOI
10.1149/2.0031410ssl

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