Role of the Hf/Si Interfacial Layer on the High Performance of MoS2-Based Conductive Bridge RAM for Artificial Synapse Application

出版年份 2020 全文链接

标题

作者

关键词

出版物

Volume 41, Issue 5, Pages 709-712

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2020-03-14

DOI

10.1109/led.2020.2980625

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