Improved resistive switching phenomena and mechanism using Cu-Al alloy in a new Cu:AlOx/TaOx/TiN structure

标题
Improved resistive switching phenomena and mechanism using Cu-Al alloy in a new Cu:AlOx/TaOx/TiN structure
作者
关键词
Resistive switching, Cu–Al, TaO, , CBRAM, Memory
出版物
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 637, Issue -, Pages 517-523
出版商
Elsevier BV
发表日期
2015-03-13
DOI
10.1016/j.jallcom.2015.02.168

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