Article
Automation & Control Systems
Xiao Long, Zhao Jun, Botao Zhang, Dongdong Chen, Wu Liang
Summary: This article presents a unified electrothermal behavior modeling method for SiC MOSFET and GaN HEMT, with a parameter extraction method based on modeling data and optimization algorithm. The proposed modeling method has been verified through simulation and experiment, showing its correctness and applicability to several commercially available devices.
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
(2021)
Article
Chemistry, Physical
Cheng-Yu Huang, Soumen Mazumder, Pu-Chou Lin, Kuan-Wei Lee, Yeong-Her Wang
Summary: In this paper, a metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) is proposed to suppress gate leakage current, decrease flicker noise, increase high-frequency performance, improve power performance, and enhance stability. This is achieved by using a Al2O3/ZrO2 stacked layer on a conventional AlGaN/GaN HEMT.
Article
Engineering, Electrical & Electronic
Yuji Ando, Ryutaro Makisako, Hidemasa Takahashi, Akio Wakejima, Jun Suda
Summary: The study revealed that the epitaxial layer structure affects the electrical characteristics of AlGaN/GaN HEMTs. GaN-on-GaN HEMTs showed an improved tradeoff between maximum drain current and breakdown characteristics compared to GaN-on-SiC HEMTs. Moreover, the impact of Fe diffusion on frequency dispersion was relatively limited in GaN-on-GaN devices.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Ankit Soni, Mayank Shrivastava
Summary: This study investigated the impact of various charge sources on the electric field distribution and breakdown mechanism of HEMTs, revealing strong correlations between different charges and breakdown voltage. Insights were developed to explain the dependence of HEMT breakdown on surface states, polarization charge, and buffer traps, aiding in the design of efficient surface passivation schemes.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Analytical
Idriss Abid, Youssef Hamdaoui, Jash Mehta, Joff Derluyn, Farid Medjdoub
Summary: We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate, enabling a positive threshold voltage higher than +1 V. The buffer structure was based on AlN/GaN superlattices (SLs), delivering a vertical breakdown voltage close to 1.5 kV with a low leakage current all the way to 1200 V.
Article
Physics, Applied
Chih-Yao Chang, Yao-Luen Shen, Shun-Wei Tang, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Yuh-Renn Wu, Chih-Fang Huang
Summary: In this study, a novel etching buffer layer was designed and incorporated into the p-GaN/AlGaN/GaN high electron mobility transistor structure to improve the etching process. The results showed that the device with the buffer layer exhibited improved process uniformity and device performance.
APPLIED PHYSICS EXPRESS
(2022)
Article
Engineering, Electrical & Electronic
Qihao Song, Ruizhe Zhang, Joseph P. Kozak, Jingcun Liu, Qiang Li, Yuhao Zhang
Summary: This study fills the gap in the comprehensive investigation of surge-energy robustness of cascode GaN HEMTs. It is found that the cascode withstands surge energy by the overvoltage capability of the GaN HEMT and accompanied avalanche in the Si MOSFET. In single-event UIS tests, the cascode fails at a lower peak overvoltage than its static breakdown voltage. In repetitive UIS tests, the failure boundary is frequency dependent.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
C. Liu, Y. Q. Chen, Y. Liu, P. Lai, Z. Y. He, Y. F. En, T. Y. Wang, Y. Huang
Summary: This work investigates the degradation behavior and physical mechanism of AIGaN/GaN HEMTs under hot-electron stress in hydrogen and nitrogen atmosphere, showing that degradation in hydrogen atmosphere is more severe. Experimental results and COMSOL finite-element simulations support this conclusion.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Physics, Applied
Xin Chen, Yaozong Zhong, Shumeng Yan, Xiaolu Guo, Hongwei Gao, Xiujian Sun, Haodong Wang, Fangqing Li, Yu Zhou, Meixin Feng, Ercan Yilmaz, Qian Sun, Hui Yang
Summary: The characteristics of an AlGaN/GaN high-electron-mobility transistor buffer structure are studied and optimized by employing an AlN/GaN superlattice (SL) structure. The influence of buffer traps on carrier transport behaviors and electrical performance for SL buffer structures under a high electric field is analyzed. The AlN/GaN SL buffer structures are further optimized with various AlN/GaN thickness ratios and their total thickness, achieving a high breakdown voltage and suppressing the buffer trapping effect.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Materials Science, Multidisciplinary
Yijun Dai, Zihui Zhao, Tian Luo, Zhehan Yu, Li Chen, Wei Guo, Jichun Ye
Summary: This article demonstrates the polarization-induced self-isolation in AlGaN/GaN high-electron-mobility transistors (HEMTs) through the incorporation of lateral-polarity structures (LPS). The incorporation of LPS leads to the formation of a 2D electron gas (2DEG) in the III-polar heterojunction and depletion in the N-polar counterpart. The introduction of LPS provides a novel planar isolation technique with improved device performance by eliminating the isolation leakage path.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Jungho Ahn, Dahee Kim, Kyung-Ho Park, Geonwook Yoo, Junseok Heo
Summary: The study presents an ultrahigh sensitive hydrogen sensor based on Pt-decorated graphene gate AlGaN/GaN MIS-HEMT, which operates at room temperature. The sensor demonstrates remarkably high sensitivity even at very low concentrations of hydrogen (<1 ppm).
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Physics, Multidisciplinary
Wen-Lu Yang, Lin-An Yang, Fei-Xiang Shen, Hao Zou, Yang Li, Xiao-Hua Ma, Yue Hao
Summary: A GaN-based HEMT with p-GaN island buried layer is proposed for terahertz applications. The redistribution of the electric field in the gate-drain channel region promotes the formation of electronic domains in the 2DEG channel. The simulation results show that the HEMT with a PIBL structure can generate stable oscillations up to 344 GHz-400 GHz.
Article
Engineering, Electrical & Electronic
M. Meer, P. Pohekar, B. Parvez, S. Ganguly, D. Saha
Summary: In this study, the thermal oxidation of nickel as gate dielectrics is used to improve the characteristics of GaN-based metal oxide semiconductor high electron mobility transistors (HEMTs). The use of NiO as the gate dielectric leads to significant improvements in drive current, transconductance, subthreshold swing, unity current gain frequency, and gate current leakage. Additionally, a positive shift in threshold voltage is observed for the NiO-based gate dielectric devices compared to the Schottky barrier HEMTs.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2022)
Article
Computer Science, Information Systems
Wei Lin, Maojun Wang, Haozhe Sun, Bing Xie, Cheng P. Wen, Yilong Hao, Bo Shen
Summary: This paper proposes an HEMT structure with a source-connected p-GaN embedded in a carbon-doped semi-insulating buffer to suppress the buffer-induced current collapse effect. Two-dimensional transient simulation demonstrates the successful suppression of current collapse in SCPG-HEMTs compared to conventional HEMTs. The mechanism of ejecting holes from SCPG into the high resistive buffer layer after off-state stress is illustrated to potentially solve the buffer-induced degradation of dynamic on-resistance in GaN power devices.
Article
Instruments & Instrumentation
Pengfei Wan, Jianqun Yang, Hao Jiang, Yadong Wei, Kai Wang, Weiqi Li, Ling Lv, Xingji Li
Summary: This paper identifies the location of the EC-0.9 eV trap caused by irradiation in AlGaN/GaN-HEMTs. The 40 keV He ions only cause damage in the passivation and AlGaN layer, while the 400 keV He ions mainly cause damage in the GaN layer. Test results show that the threshold voltage of the device shifts positively after 400 keV He ion irradiation, and the carrier mobility and Schottky barrier decrease. DLTS results reveal a defect with EC-0.9 eV in the GaN layer after irradiation. Combined with DLTS and TCAD simulation, it is determined that the location of the EC-0.9 eV defects caused by displacement damage is in the GaN layer.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
(2023)
Article
Energy & Fuels
Yuhao Zhang, Hongling Ma, Xilin Shi, Hongwu Yin, Shengnan Zhang
Summary: This study focuses on the structure of China's salt mines and the design of horizontal salt cavern gas storage (HSCGS). By establishing a Yield-Dilatancy-Failure (YDF) model, the minimum pressure and casing shoe position have been determined, providing reference for the design of HSCGS.
ENERGY SOURCES PART A-RECOVERY UTILIZATION AND ENVIRONMENTAL EFFECTS
(2023)
Review
Food Science & Technology
Xiaoxue Zhu, Xin-Huai Zhao, Qiang Zhang, Na Zhang, Olugbenga P. Soladoye, Rotimi E. Aluko, Yuhao Zhang, Yu Fu
Summary: This article reviews the latest research progress on the relationship between celiac disease (CD) and gluten. It emphasizes the structure and function of gluten peptides related to CD, gluten detection methods, the effects of processing on gluten, and gluten-free diets. The limitations in current CD research are also discussed. This study facilitates a comprehensive understanding of CD and gluten, providing a theoretical reference for future research.
CRITICAL REVIEWS IN FOOD SCIENCE AND NUTRITION
(2023)
Review
Food Science & Technology
Xilong Wang, Bei Le, Na Zhang, Kathrine H. Bak, Yuhao Zhang, Yu Fu
Summary: Collagen peptides from fish have excellent bioactive and functional properties, making them important functional ingredients in the food industry. However, the off-flavour in fish collagen peptides limits their application. Therefore, researching the removal of off-flavour compounds from fish collagen peptides is of great importance.
INTERNATIONAL JOURNAL OF FOOD SCIENCE AND TECHNOLOGY
(2023)
Review
Chemistry, Multidisciplinary
Hefei Liu, Yuan Qin, Hung-Yu Chen, Jiangbin Wu, Jiahui Ma, Zhonghao Du, Nan Wang, Jingyi Zou, Sen Lin, Xu Zhang, Yuhao Zhang, Han Wang
Summary: This paper reviews the progress of artificial neuronal devices based on emerging volatile switching materials, focusing on the demonstrated neuron models implemented in these devices and their utilization for computational and sensing applications. Furthermore, it discusses the inspirations from neuroscience and engineering methods to enhance the neuronal dynamics that are yet to be realized in artificial neuronal devices and networks towards achieving the full functionalities of biological neurons.
ADVANCED MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Kunran Xu, Huawei Zhang, Yishi Li, Yuhao Zhang, Rui Lai, Yi Liu
Summary: This article discusses the importance and challenges of tiny machine learning (TinyML), which executes AI workloads on resource and power strictly restricted systems. It introduces an extremely tiny backbone for constructing high efficiency CNN models for various visual tasks. Additionally, a specially designed neural co-processor (NCP) is interconnected with MCU to build an ultra-low power TinyML system, achieving record-breaking ultra-low power consumption of 160mW while implementing object detection and recognition at 30FPS.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
(2023)
Article
Engineering, Electrical & Electronic
Boyan Wang, Ming Xiao, Zichen Zhang, Yifan Wang, Yuan Qin, Qihao Song, Guo-Quan Lu, Khai Ngo, Yuhao Zhang
Summary: Size optimization of Achip is crucial for accurate cost analysis and design of multichip modules, especially for high-cost WBG and UWBG power devices. This study presents a new electrothermal approach to optimize Achip for a given set of specifications, considering breakdown voltage, conduction current, and switching frequency. The approach takes into account conduction and switching losses, as well as heat dissipation in the chip and package. It provides guidelines for power module design and offers more accurate cost analysis.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Joseph P. Kozak, Qihao Song, Ruizhe Zhang, Yunwei Ma, Jingcun Liu, Qiang Li, Wataru Saito, Yuhao Zhang
Summary: This article presents a comparative study of the parametric shift and recovery of three mainstream GaN HEMTs in repetitive overvoltage switching. The study shows that the devices exhibit shifts in threshold voltage and saturation current during the switching process, and these shifts saturate in a short period of time. The recovery process is dominated by hole detrapping and through-gate removal, with the gate stack playing a significant role. The article also suggests effective methods for poststress recovery.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Congyue Zhang, Xiaobo Dou, Lin Wang, Yunfei Dong, Yu Ji
Summary: This paper presents a unified distributed cooperative voltage control approach for grid-following (GFL) and grid-forming (GFM) distributed generators (DGs) in island microgrids. The approach employs a unified modeling method and a novel range-consensus-based distributed control algorithm. The proposed method improves the voltage regulation and anti-interference ability of the system, and its effectiveness is validated through simulation results and a hardware-in-the-loop test.
IEEE TRANSACTIONS ON POWER SYSTEMS
(2023)
Review
Physics, Applied
Ruizhe Zhang, Yuhao Zhang
Summary: This paper investigates avalanche and non-avalanche breakdown mechanisms in wide bandgap and ultra-wide bandgap devices and comparatively introduces various breakdown voltage characterization methods. Additionally, it discusses the device physics behind time- and frequency-dependent breakdown voltage and enabling device structures for avalanche breakdown, while identifying research gaps for understanding breakdown in wide bandgap and ultra-wide bandgap power devices.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2023)
Article
Mathematics, Applied
Yuhao Zhang, Haiyun Dong, Kun Wang
Summary: In this paper, we propose an unconditionally stable and decoupled identical-relation-preserving scheme for solving the incompressible Navier-Stokes equations with variable density. By introducing scalar auxiliary variables and converting the equations into an equivalent form, we construct a linear decoupled finite element scheme. The scheme is proven to preserve the mass, momentum, and energy identical relations and is efficient in numerical implementation. Numerical examples are provided to verify the correctness and efficiency of the proposed scheme, including an extension to a coupled nonlinear model with temperature.
COMPUTERS & MATHEMATICS WITH APPLICATIONS
(2023)
Article
Gastroenterology & Hepatology
Chao Sheng, Liping Sun, Zhangyan Lyu, Limin Li, Yuhao Zhang, Yu Zhang, Yacong Zhang, Hongji Dai, Yubei Huang, Fengju Song, Yuan Yuan, Kexin Chen
Summary: A modified ABC method was developed to improve gastric cancer screening performance in China, especially among Helicobacter pylori-infected but serum pepsinogen test-negative individuals. The study showed that this modified method effectively identified high-risk population for gastric cancer among the targeted individuals in China.
Article
Chemistry, Inorganic & Nuclear
Jing Sun, Xiongkai Tang, Jiaqi Tang, Yuhao Zhang, Zilin Li, Hui Chaolumen, Shuo Guo, Hui Shen
Summary: Little progress has been made in developing alternative bottom-up synthetic strategies for N-heterocyclic carbene (NHC)-stabilized gold nanoclusters, but this study presents a simple and straightforward approach using imidazolium salts instead of free carbenes or NHC-coordinated gold complexes as precursors. The researchers successfully synthesized an NHC-stabilized Au13Br4 cluster using a one-pot and one-step process involving chemical reduction. This work not only expands the Au13 library with a new NHC-ligated superatom, but also provides a facile and reasonable method to explore similar analogues.
INORGANIC CHEMISTRY
(2023)
Article
Nuclear Science & Technology
Haiqi Zhao, Daogang Lu, Yuhao Zhang, Xueyuan Zhang
Summary: This paper investigates the influence of different heat exchanger (DHX) layout schemes on the performance of a pool-type sodium-cooled fast reactor (SFR) through numerical simulations. The results show that installing DHXs in both cold and hot pools can achieve the long-term cooling stage of natural convection earlier and result in a more uniform temperature distribution in the hot pool. However, a local asymmetrical temperature distribution is observed in the cold pool.
PROGRESS IN NUCLEAR ENERGY
(2023)
Article
Nuclear Science & Technology
Yuhao Zhang, Xueyuan Zhang, Haiqi Zhao, Daogang Lu
Summary: The China Experimental Fast Reactor (CEFR) has a pool-type primary circuit. The sticking of the main circulating pump shaft in the secondary circuit is an important accident. To investigate this accident, the three-dimensional thermal-hydraulic phenomena in the sodium pool were simulated using a modular modeling and integrated coupling calculation method. The simulation results provided numerical reference for the safety design and assessment of CEFR.
PROGRESS IN NUCLEAR ENERGY
(2023)
Article
Chemistry, Physical
Mengting Jin, Yanhao Wang, Mengyue Gu, Xuewen Zhao, Rongzheng Zhao, Yuhao Zhang, Yonghong Cheng, Jinying Zhang
Summary: This study successfully controlled the growth of layered violet phosphorus along a specific direction with the assistance of tin, resulting in needle-shaped phosphorus with enhanced photocatalytic degradation ability.
