Conductive filament structure in HfO2 resistive switching memory devices

标题
Conductive filament structure in HfO2 resistive switching memory devices
作者
关键词
Resistive switching, Electron energy loss spectroscopy, Conductive filament
出版物
SOLID-STATE ELECTRONICS
Volume 111, Issue -, Pages 161-165
出版商
Elsevier BV
发表日期
2015-06-19
DOI
10.1016/j.sse.2015.05.044

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