Memory leads the way to better computing

A new spin on magnetic memories

(2015) Andrew D. Kent et al.   Nature Nanotechnology

Basic principles of STT-MRAM cell operation in memory arrays

(2013) A V Khvalkovskiy et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Carbon nanotube computer

(2013) Max M. Shulaker et al.   NATURE

Spin Hall effect clocking of nanomagnetic logic without a magnetic field

(2013) Debanjan Bhowmik et al.   Nature Nanotechnology

Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories

(2013) Katsumasa Kamiya et al.   PHYSICAL REVIEW B

Non-volatile spin switch for Boolean and non-Boolean logic

(2012) Supriyo Datta et al.   APPLIED PHYSICS LETTERS

An Ultra-Low Reset Current Cross-Point Phase Change Memory With Carbon Nanotube Electrodes

(2012) Jiale Liang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Storage-class memory: The next storage system technology

(2010) R. F. Freitas et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Overview of candidate device technologies for storage-class memory

(2010) G. W. Burr et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Phase Change Memory

(2010) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS