Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots

标题
Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots
作者
关键词
-
出版物
Nanoscale Research Letters
Volume 7, Issue 1, Pages 194
出版商
Springer Nature
发表日期
2012-03-23
DOI
10.1186/1556-276x-7-194

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