Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application

标题
Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application
作者
关键词
-
出版物
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume 30, Issue 1, Pages 01A148
出版商
American Vacuum Society
发表日期
2011-12-16
DOI
10.1116/1.3669516

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