A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory

标题
A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 60, Issue 4, Pages 1379-1383
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2013-03-08
DOI
10.1109/ted.2013.2245508

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