A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors

标题
A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 3, Pages 282-284
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2011-02-04
DOI
10.1109/led.2010.2101577

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