Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources
出版年份 2015 全文链接
标题
Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources
作者
关键词
-
出版物
Scientific Reports
Volume 5, Issue 1, Pages -
出版商
Springer Nature
发表日期
2015-02-16
DOI
10.1038/srep08332
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates
- (2014) Q. Wang et al. APPLIED PHYSICS LETTERS
- Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates
- (2014) Martin Martens et al. IEEE PHOTONICS TECHNOLOGY LETTERS
- Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting
- (2014) M. G. Kibria et al. Nature Communications
- Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111)
- (2013) Yinjun Zhang et al. APPLIED PHYSICS LETTERS
- Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors
- (2013) Tsung-Ting Kao et al. APPLIED PHYSICS LETTERS
- Semipolar (202̄1) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage
- (2013) Yoshinobu Kawaguchi et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- p-Type InN Nanowires
- (2013) S. Zhao et al. NANO LETTERS
- Mixed Polarity in Polarization-Induced p–n Junction Nanowire Light-Emitting Diodes
- (2013) Santino D. Carnevale et al. NANO LETTERS
- Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiOx by catalyst-free molecular beam epitaxy
- (2013) S. Zhao et al. Nanoscale
- Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes
- (2012) Yoshinobu Kawaguchi et al. APPLIED PHYSICS LETTERS
- Tuning the Surface Charge Properties of Epitaxial InN Nanowires
- (2012) S. Zhao et al. NANO LETTERS
- Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity
- (2012) Sergio Fernández-Garrido et al. NANO LETTERS
- Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices
- (2011) Yoshitaka Taniyasu et al. APPLIED PHYSICS LETTERS
- Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)
- (2011) Karine Hestroffer et al. PHYSICAL REVIEW B
- Surface 210 nm light emission from an AlN p–n junction light-emitting diode enhanced by A-plane growth orientation
- (2010) Yoshitaka Taniyasu et al. APPLIED PHYSICS LETTERS
- GaN Nanowires Grown by Molecular Beam Epitaxy
- (2010) Kris A. Bertness et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures
- (2010) J. Simon et al. SCIENCE
- Advances in group III-nitride-based deep UV light-emitting diode technology
- (2010) M Kneissl et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency
- (2009) A. Bhattacharyya et al. APPLIED PHYSICS LETTERS
- Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys
- (2009) M. L. Nakarmi et al. APPLIED PHYSICS LETTERS
- Deep-Ultraviolet Light-Emitting Diodes
- (2009) Michael S. Shur et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Direct measurement of dopant distribution in an individual vapour–liquid–solid nanowire
- (2009) Daniel E. Perea et al. Nature Nanotechnology
- High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer
- (2009) Hirotoshi Tsuzuki et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Diameter-dependent dopant location in silicon and germanium nanowires
- (2009) P. Xie et al. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
- Room temperature polariton lasing in a GaN∕AlGaN multiple quantum well microcavity
- (2008) Gabriel Christmann et al. APPLIED PHYSICS LETTERS
- Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode
- (2008) Harumasa Yoshida et al. APPLIED PHYSICS LETTERS
- GaN/AlGaN nanocolumn ultraviolet light-emitting diodes grown on n-(111) Si by RF-plasma-assisted molecular beam epitaxy
- (2008) H. Sekiguchi et al. ELECTRONICS LETTERS
- Ultraviolet light-emitting diodes based on group three nitrides
- (2008) Asif Khan et al. Nature Photonics
Add your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload NowAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started