Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

标题
Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures
作者
关键词
-
出版物
SCIENCE
Volume 327, Issue 5961, Pages 60-64
出版商
American Association for the Advancement of Science (AAAS)
发表日期
2010-01-01
DOI
10.1126/science.1183226

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