GaN/A1GaN nanocolumn ultraviolet light-emitting diodes grown on n-(111) Si by RF-plasma-assisted molecular beam epitaxy

GaN nanocolumns have excellent optical characteristics owing to their dislocation-free nature. GaN/A1GaN nanocolumn ultraviolet light-emitting diodes were demonstrated on n-(111) silicon by RF-plasma-assisted molecular beam epitaxy for the first time. Clear diode characteristics and ultraviolet emission with a peak wavelength of 354 nm were observed under continuous current injection at room temperature.