Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111)

Effect of Graded Al$_{x}$Ga$_{1-x}$N Layers on the Properties of GaN Grown on Patterned Si Substrates

(2012) Yu-Lin Hsiao et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Characterization of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate

(2012) Youhua Zhu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

284–300 nm Quaternary InAlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si(111) Substrates

(2011) Sachie Fujikawa et al.   Applied Physics Express

Realization of 256–278 nm AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si Substrates Using Epitaxial Lateral Overgrowth AlN Templates

(2011) Takuya Mino et al.   Applied Physics Express

InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates

(2010) Dongmei Deng et al.   APPLIED PHYSICS LETTERS

Growth of AlGaN and AlN on patterned AlN/sapphire templates

(2010) V. Kueller et al.   JOURNAL OF CRYSTAL GROWTH

Pulsed metal-organic chemical vapor deposition of high-quality AlN/GaN superlattices for near-infrared intersubband transitions

(2009) C. Bayram et al.   APPLIED PHYSICS LETTERS

Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys

(2009) M. L. Nakarmi et al.   APPLIED PHYSICS LETTERS

Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes

(2008) R. Jain et al.   APPLIED PHYSICS LETTERS

High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN

(2007) Kentaro Nagamatsu et al.   JOURNAL OF CRYSTAL GROWTH