Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices

Origin of exciton emissions from an AlN p-n junction light-emitting diode

(2011) Yoshitaka Taniyasu et al.   APPLIED PHYSICS LETTERS

Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency

(2011) Katsumasa Kamiya et al.   APPLIED PHYSICS LETTERS

222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties

(2010) Hideki Hirayama et al.   Applied Physics Express

Surface 210 nm light emission from an AlN p–n junction light-emitting diode enhanced by A-plane growth orientation

(2010) Yoshitaka Taniyasu et al.   APPLIED PHYSICS LETTERS

Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

(2010) Tim Kolbe et al.   APPLIED PHYSICS LETTERS

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics