期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 26, 期 4, 页码 342-345出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2013.2293611
关键词
AlGaN; AlN substrates; epitaxial lateral overgrowth; lasers; polarization; sapphire substrates; ultraviolet
资金
- German Federal Ministry of Education and Research within the WideBaSe Project [03WKBT03C]
- Deutsche Forschungsgemeinschaft within the Collaborative Research Center Semiconductor Nanophotonics [SFB 787]
The performance characteristics of optically pumped laser heterostructures emitting in the UV-C spectral range between 272 and 279nm are investigated. The laser heterostructures were grown by metal-organic vapor phase epitaxy on (0001) planar AlN/sapphire, epitaxially laterally overgrown (ELO) AlN/sapphire, and bulk AlN substrates with threading dislocation densities ranging from 2x10(10) to 104 cm(-2). We found that the defect density strongly affects the laser performance. The lowest pulse threshold energy density of 50 mJ/cm(2) under resonant optical pumping condition was obtained for an AlGaN multiple quantum well laser grown pseudomorphically on low defect density bulk AlN substrate. Lasing was also observed for AlGaN MQW heterostructures grown on ELO AlN/sapphire templates. The laser emission in all lasers was TE polarized. However, no lasing was observed for heterostructures grown on high defect density AlN/sapphire.
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