Large Photoresponse in Amorphous In–Ga–Zn–O and Origin of Reversible and Slow Decay

Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO4Thin-Film Transistors

(2009) Kazushige Takechi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

(2009) T. Kamiya et al.   Journal of Display Technology

Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x: Tauc-Lorentz optical model and origins of subgap states

(2009) Toshio Kamiya et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Origin of Subthreshold Swing Improvement in Amorphous Indium Gallium Zinc Oxide Transistors

(2008) Jong Han Jeong et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS