Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface

Approach for Al2O3rear surface passivation of industrial p-type Si PERC above 19%

(2012) Bart Vermang et al.   PROGRESS IN PHOTOVOLTAICS

Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks

(2011) G. Dingemans et al.   APPLIED PHYSICS LETTERS

Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100)

(2011) G. Dingemans et al.   JOURNAL OF APPLIED PHYSICS

Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition

(2011) G. Dingemans et al.   JOURNAL OF APPLIED PHYSICS

Excellent silicon surface passivation with 5 Å thin ALD Al2O3 layers: Influence of different thermal post-deposition treatments

(2011) Armin Richter et al.   Physica Status Solidi-Rapid Research Letters

Very fast light-induced degradation ofa-Si:H/c-Si(100) interfaces

(2011) Stefaan De Wolf et al.   PHYSICAL REVIEW B

Silicon Surface Passivation by Thin Thermal Oxide/PECVD Layer Stack Systems

(2011) Sebastian Mack et al.   IEEE Journal of Photovoltaics

Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

(2010) G. Dingemans et al.   APPLIED PHYSICS LETTERS

Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD

(2010) G. Dingemans et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al[sub 2]O[sub 3]

(2010) G. Dingemans et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Improved electrical transport in Al-doped zinc oxide by thermal treatment

(2010) F. Ruske et al.   JOURNAL OF APPLIED PHYSICS

Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film

(2010) G. Dingemans et al.   Physica Status Solidi-Rapid Research Letters

High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition

(2009) Shinsuke Miyajima et al.   Applied Physics Express

Thermal activation energy for the passivation of the n-type crystalline silicon surface by hydrogenated amorphous silicon

(2009) Jonathon Mitchell et al.   APPLIED PHYSICS LETTERS

Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide

(2009) Pierre Saint-Cast et al.   APPLIED PHYSICS LETTERS

Atomic Layer Deposition: An Overview

(2009) Steven M. George   CHEMICAL REVIEWS

Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

(2009) G. Dingemans et al.   JOURNAL OF APPLIED PHYSICS

Effective surface passivation of crystalline silicon using ultrathin Al2O3films and Al2O3/SiNxstacks

(2009) Jan Schmidt et al.   Physica Status Solidi-Rapid Research Letters

Thermal stability of the Al2O3passivation on p-type silicon surfaces for solar cell applications

(2009) Jan Benick et al.   Physica Status Solidi-Rapid Research Letters

Silicon surface passivation by ultrathin Al2O3films synthesized by thermal and plasma atomic layer deposition

(2009) G. Dingemans et al.   Physica Status Solidi-Rapid Research Letters

Hydrogen diffusion in silicon from plasma-enhanced chemical vapor deposited silicon nitride film at high temperature

(2008) Manav Sheoran et al.   APPLIED PHYSICS LETTERS

High efficiency n-type Si solar cells on Al2O3-passivated boron emitters

(2008) Jan Benick et al.   APPLIED PHYSICS LETTERS

On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS

Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3

(2008) J. Schmidt et al.   PROGRESS IN PHOTOVOLTAICS