标题
Charge Loss Mechanisms of Nitride-Based Charge Trap Flash Memory Devices
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 60, Issue 10, Pages 3256-3264
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2013-09-28
DOI
10.1109/ted.2013.2279410
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Comprehensive Understanding on the Role of Tunnel Oxide Top Nitridation for the Reliability of Nanoscale Flash Memory
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- Flash memories: Successes and challenges
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- Charge Gain, NBTI, and Random Telegraph Noise in EEPROM Flash Memory Devices
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- Comprehensive Investigation of Statistical Effects in Nitride Memories—Part II: Scaling Analysis and Impact on Device Performance
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