Review
Chemistry, Analytical
Alessandro S. Spinelli, Gerardo Malavena, Andrea L. Lacaita, Christian Monzio Compagnoni
Summary: This paper reviews the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays, discussing the impact of polycrystalline silicon channels and the transition from planar to 3D architectures on RTN dependences. Experimental data are presented and explained through theoretical and simulation models, highlighting the role of highly-defective grain boundaries and localized nature of RTN traps in percolative current transport.
Article
Engineering, Electrical & Electronic
Thales Becker, Xuehua Li, Eduardo Moser, Pedro Alves, Gilson Wirth, Mario Lanza
Summary: In this work, the researchers observed giant random conductance fluctuations in resistive switching (RS) devices based on TiO2, HfO2, and hexagonal boron nitride (h-BN) under reading voltages, which is beneficial for recognizing the device's two-state in applications such as stochastic computing ICs.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Computer Science, Information Systems
Gerardo Malavena, Alessandro Sottocornola Spinelli, Christian Monzio Compagnoni
Summary: This work investigates the implementation of a neuromorphic digit classifier based on NOR Flash memory arrays using a PWM scheme, comparing its performance against a PAM scheme in the presence of various noise sources. The study shows that the PWM approach results in lower degradation of classifier truthfulness due to limited program accuracy compared to the PAM approach, especially in the presence of program noise and cell VT instabilities. These results suggest a viable solution to overcome some of the more serious reliability issues of NOR Flash-based artificial neural networks, paving the way for highly-reliable, noise-resilient neuromorphic systems.
Article
Chemistry, Analytical
Calvin Yi-Ping Chao, Thomas Meng-Hsiu Wu, Shang-Fu Yeh, Chih-Lin Lee, Honyih Tu, Joey Chiao-Yi Huang, Chin-Hao Chang
Summary: This study investigates the degradation of random telegraph noise (RTN) and the threshold voltage (Vt) shift in an 8.3Mpixel stacked CMOS image sensor (CIS) under hot carrier injection (HCI) stress. The results reveal significant statistical differences between these two aging phenomena. Vt shift occurs uniformly in all devices and evolves gradually over time, while RTN degradation is abrupt and random, affecting only a small percentage of devices. The study demonstrates the generation of new RTN traps during HCI stress, both statistically and on an individual device level, and proposes an improved method to identify RTN devices with degenerate amplitude histograms.
Article
Mathematics
Juan E. Ruiz-Castro, Christian Acal, Ana M. Aguilera, Juan B. Roldan
Summary: A new stochastic process was developed by considering the internal performance of macro-states with phase-type distributed sojourn time, leading to interesting measures and stationary distribution calculation through matrix-algorithmic methods. The analysis of the number of visits distribution to a determine macro-state was done through differential equations and Laplace transform. The results were successfully applied to study random telegraph noise in resistive memories, which is important for both technological applications and physical characterization.
Article
Engineering, Electrical & Electronic
Kean H. Tok, Jian F. Zhang, James Brown, Zhigang Ji, Weidong Zhang, John S. Marsland
Summary: Random telegraph noise (RTN) in saturation current, I-D,I-SAT, has received limited attention compared to RTN in linear drain current, I-D,I-LIN. This lack of RTN model in I-D,I-SAT hinders accurate circuit simulation. This study addresses this issue by providing statistical test data for RTN in I-D,I-SAT, measuring the RTN in real Delta V-TH, and applying an integral methodology to develop the cumulative distribution function (CDF) for key parameters needed by circuit simulation. The results show that separate modeling is required for Delta I-D,I-SAT/I-D,I- SAT and Delta V-TH,V- SAT compared to their linear counterparts.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Sara Vecchi, Paolo Pavan, Francesco Maria Puglisi
Summary: Investigated the random telegraph noise (RTN) in HfO2-based devices and its relation to defects. Through physical simulations and analysis, discovered some underlying mechanisms of RTN, and proposed a new method that takes into account the impact of electrostatic interactions between defects.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Multidisciplinary Sciences
Mingyi Rao, Hao Tang, Jiangbin Wu, Wenhao Song, Max Zhang, Wenbo Yin, Ye Zhuo, Fatemeh Kiani, Benjamin Chen, Xiangqi Jiang, Hefei Liu, Hung-Yu Chen, Rivu Midya, Fan Ye, Hao Jiang, Zhongrui Wang, Mingche Wu, Miao Hu, Han Wang, Qiangfei Xia, Ning Ge, Ju Li, J. Joshua Yang
Summary: Neural networks based on memristive devices have the potential to improve throughput and energy efficiency in machine learning and artificial intelligence, especially in edge applications. To commercialize edge applications, it is practical to download synaptic weights from cloud training and program them into memristors. High-precision programmability is required for memristors in neural network applications to ensure uniform and accurate performance across multiple networks.
Article
Engineering, Electrical & Electronic
Pablo Saraza-Canflanca, Rafael Castro-Lopez, Elisenda Roca, Javier Martin-Martinez, Rosana Rodriguez, Montserrat Nafria, Francisco Fernandez
Summary: The article investigates the impact of biasing conditions on the extraction of parameters characterizing the phenomenon of random telegraph noise (RTN) in scaled FET devices. It is shown that measuring RTN immediately after biasing the device may lead to an overestimation of its impact, compared to situations where the device has been biased for some time. This is first presented theoretically and then demonstrated experimentally with measurements from a CMOS-transistor array.
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
(2022)
Article
Engineering, Electrical & Electronic
Mariia Gorchichko, En Xia Zhang, Mahmud Reaz, Kan Li, Peng Fei Wang, Jingchen Cao, Rachel M. Brewer, Ronald D. Schrimpf, Robert A. Reed, Brian D. Sierawski, Michael L. Alles, Jonathan Cox, Steven L. Moran, Subramanian S. Iyer, Daniel M. Fleetwood
Summary: The effects of programming/erasing (P/E) and total-ionizing dose (TID) on 2-and 40-fin charge-trap transistors (CTTs) fabricated in a 14-nm bulk-Si CMOS technology are investigated. Significant random telegraph noise (RTN) is observed in as-processed CTTs, especially for 2-fin devices. Trapped charge in programmed devices does not significantly affect 1/f noise magnitudes, but P/E leads to trap activation/deactivation, causing changes in border-trap energy and spatial distributions. TID irradiation activates a large number of stable radiation-induced traps.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Review
Physics, Condensed Matter
Sweta Chander, Sanjeet Kumar Sinha, Rekha Chaudhary
Summary: This paper provides a comprehensive review of the impact of electrical noise on the performance of various TFET structures, including both low-frequency and high-frequency noise sources. Different types of electrical noises occurring in simple TFET devices and different TFET structures are investigated.
SUPERLATTICES AND MICROSTRUCTURES
(2022)
Article
Engineering, Electrical & Electronic
Victor D. Pepel, Preston T. Webster, Julie Logan, Christian P. Morath
Summary: Random telegraph noise (RTN) is a type of low-frequency noise that degrades the sensitivity of focal plane arrays (FPAs) and other electronics. Careful analysis of RTN can provide information about the material defects generating this noise and may lead to a solution to eliminate this noise source. Using a histogram-based detection algorithm, the shape of the pixel output histogram is evaluated to detect RTN pixels and extract the energy levels of the defects.
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
(2021)
Article
Engineering, Electrical & Electronic
Gilson Wirth
Summary: Charge trapping is studied in the context of random telegraph noise (RTN) and low-frequency noise (1/f noise) using a unified statistical modeling approach. Analytical formulations for 1/f noise (frequency domain) and RTN (time domain) have been derived with the same model parameters discussed for MOSFET variability. The role of the observation window in both time and frequency domain is detailed in the work, showing how it impacts the variance of drain current and the number of observable traps.
SOLID-STATE ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Mauricio Banaszeski da Silva, Thiago H. Both, Gilson I. Wirth
Summary: Random telegraph noise (RTN) in highly scaled MOSFETs can decrease circuit reliability and yield. We derived analytical formulations to model the impact of RTN on inverter delay and ring oscillator jitter. Key parameters for characterizing RTN in circuit analysis are the distribution of current deviations and the density of traps. The model establishes a direct relationship between jitter variance in oscillators (or delay variance in inverters) and the power spectral density of RTN, which includes 1/f noise.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2022)
Article
Physics, Multidisciplinary
K. Hayakawa, S. Kanai, T. Funatsu, J. Igarashi, B. Jinnai, W. A. Borders, H. Ohno, S. Fukami
Summary: Analyzing and calculating the effects of random telegraph noise on in-plane easy-axis MTJs, it was found that i-MTJs can have faster RTN. Superparamagnetic i-MTJs can achieve relaxation times down to 8 ns without bias current, significantly shorter than typical p-MTJs and faster than any reported i-MTJs to date, providing new insights for developing stochastic MTJs for high-performance probabilistic computers.
PHYSICAL REVIEW LETTERS
(2021)
Article
Chemistry, Physical
W. Wang, G. Pedretti, V. Milo, R. Carboni, A. Calderoni, N. Ramaswamy, A. S. Spinelli, D. Ielmini
FARADAY DISCUSSIONS
(2019)
Article
Chemistry, Physical
W. Wang, G. Pedretti, V. Milo, R. Carboni, A. Calderoni, N. Ramaswamy, A. S. Spinelli, D. Ielmini
FARADAY DISCUSSIONS
(2019)
Article
Engineering, Electrical & Electronic
Alessandro S. Spinelli, Christian Monzio Compagnoni, Andrea L. Lacaita
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Engineering, Electrical & Electronic
Alessandro S. Spinelli, Christian Compagnoni, Andrea L. Lacaita
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Engineering, Electrical & Electronic
Giulio Franchini, Alessandro S. Spinelli, Gianluca Nicosia, Ivan Fumagalli, Marco Asa, Chiara Groppi, Christian Rinaldi, Andrea L. Lacaita, Riccardo Bertacco, Christian Monzio Compagnoni
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Engineering, Electrical & Electronic
Aurelio Mannara, Gerardo Malavena, Alessandro Sottocornola Spinelli, Christian Monzio Compagnoni
Summary: This paper quantitatively compares the results of current transport in polysilicon-channel MOSFETs obtained from numerical simulations under different modeling assumptions. It focuses on cylindrical nanowire and macaroni gate-all-around structures, which are important in 3-Dimensional NAND Flash memories.
JOURNAL OF COMPUTATIONAL ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Giulio Franchini, Gerardo Malavena, Christian Monzio Compagnoni, Alessandro S. Spinelli
IEEE ELECTRON DEVICE LETTERS
(2020)
Review
Chemistry, Analytical
Alessandro S. Spinelli, Gerardo Malavena, Andrea L. Lacaita, Christian Monzio Compagnoni
Summary: This paper reviews the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays, discussing the impact of polycrystalline silicon channels and the transition from planar to 3D architectures on RTN dependences. Experimental data are presented and explained through theoretical and simulation models, highlighting the role of highly-defective grain boundaries and localized nature of RTN traps in percolative current transport.
Article
Computer Science, Information Systems
Gerardo Malavena, Alessandro Sottocornola Spinelli, Christian Monzio Compagnoni
Summary: This work investigates the implementation of a neuromorphic digit classifier based on NOR Flash memory arrays using a PWM scheme, comparing its performance against a PAM scheme in the presence of various noise sources. The study shows that the PWM approach results in lower degradation of classifier truthfulness due to limited program accuracy compared to the PAM approach, especially in the presence of program noise and cell VT instabilities. These results suggest a viable solution to overcome some of the more serious reliability issues of NOR Flash-based artificial neural networks, paving the way for highly-reliable, noise-resilient neuromorphic systems.
Article
Engineering, Electrical & Electronic
Gerardo Malavena, Mattia Giulianini, Luca Chiavarone, Alessandro S. Spinelli, Christian Monzio Compagnoni
Summary: In this research, it is shown through experiments that a high-temperature idle/data-retention phase leads to a permanent intensification of random telegraph noise (RTN) in 3-D NAND Flash arrays. The effect is explained by the depassivation of traps at grain boundaries during the high-temperature phase, resulting in nonuniformities in channel inversion and an increased number of active defects in the RTN process.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Physics, Applied
M. Dossena, G. Malavena, A. S. Spinelli, C. Monzio Compagnoni
Summary: This paper presents a comprehensive modeling investigation of the Pt/BaTiO3/Nb:SrTiO3 stack designed as a Ferroelectric Tunnel Junction (FTJ), with a focus on specific material features often overlooked. The analysis includes validation through a consistent comparison with experimental data, exploring the resistive memory window of the FTJ, and providing insights for the development of next-generation memory technologies based on FTJ.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
Mattia Giulianini, Gerardo Malavena, Christian Monzio Compagnoni, Alessandro S. Spinelli
Summary: This paper presents a detailed analysis of the time dynamics of the down-coupling phenomenon (DCP) in 3-D NAND Flash memory strings. The transient time dynamics of the channel potential following the wordline (WL) bias transition from the pass voltage to zero is studied via numerical simulation. The results highlight the existence of three temporal regimes controlled by different physical processes and can be used as a design guideline for NAND strings.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Proceedings Paper
Engineering, Electrical & Electronic
G. Malavena, J. L. Mazzola, M. Greatti, C. Monzio Compagnoni, A. L. Lacaita, V Marano, M. Lauria, D. Paci, E. Speroni, A. S. Spinelli
Summary: This study investigates the statistical spread of Time-Dependent Dielectric Breakdown (TDDB) in thick polymeric dielectrics for galvanic isolation devices. By conducting Monte Carlo simulations and introducing inhomogeneities in the material properties, the experimental TDDB spread is successfully reproduced. The findings of this study have important implications for the design and use of galvanic isolation devices.
2022 IEEE LATIN AMERICAN ELECTRON DEVICES CONFERENCE (LAEDC)
(2022)
Proceedings Paper
Engineering, Electrical & Electronic
G. Malavena, S. Petro, A. S. Spinelli, C. Monzio Compagnoni
49TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2019)
(2019)
Proceedings Paper
Engineering, Electrical & Electronic
A. Mannara, A. S. Spinelli, A. L. Lacaita, C. Monzio Compagnoni
49TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2019)
(2019)
