Article
Materials Science, Multidisciplinary
Sin-En Li, Guan-Zhang Lu, Ji-Lin Shen, Meng-Jer Wu, Yu-Ting Chen, Mujahid Mustaqeem, Yang-Fang Chen
Summary: This study presents a first attempt to achieve multifunctional nonvolatile memory based on all 2D heterostructures, demonstrating long-term stability and nonvolatile characteristics under both optical and electrical control signals.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Chemistry, Analytical
Young Suh Song, Byung-Gook Park
Summary: The use of aluminum oxide as a tunneling layer in NOR flash array significantly improves retention characteristics, demonstrating a higher threshold voltage window compared to other structures. The proposed device structure shows potential for successful application in NOR flash memory, with the possibility of utilizing HfO2 as a charge-trapping layer.
Article
Physics, Applied
Rino Kawashima, Hiroshi Nohira, Ryousuke Ishikawa, Yuichiro Mitani
Summary: Graphene can be transformed into a highly insulating thin film by fluorination treatment, making it suitable for use as a charge trapping layer in nonvolatile memory. This study analyzed fluorographene using X-ray photoelectron spectroscopy and Raman spectroscopy, and evaluated its electrical performance in metal-insulator-semiconductor (MIS) capacitors. The results showed that even when the fluorine concentration reached 14%, a large flat-band voltage shift was observed. The charge centroid of the MIS capacitor coincided with the location of the fluorographene, indicating its ability to capture injected charges.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2023)
Article
Physics, Applied
Puhao Chai, Jun Zhu, Jiale Chen
Summary: A charge trapping memory with high-k nanocrystal-amorphous phase structure was fabricated. Numerous charge traps were generated at the phase interface, significantly increasing the charge trapping capability. The device demonstrated a larger memory window and excellent stability.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Jun Zhu, Kang Li, Yu Zhang
Summary: In this study, a high-k composite of TiO2-ZrO2 (TZO) was proposed as a charge trapping layer for non-volatile memory devices, and the effect of rapid thermal annealing on storage capability was investigated. The device showed a large memory window and high trapped charge density after annealing at 800 degrees C for 90 seconds.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
C. Zhang, D. Li, P. T. Lai, X. D. Huang
Summary: This study investigates a new type of charge-trapping nonvolatile memory (NVM) that has the same structure as a thin-film transistor (TFT). The NVM uses metal-hydroxyl (M-OH) defects in the back channel for charge storage. Devices with different M-OH content were prepared by changing thermal treatment. The high M-OH content device shows good NVM performance, while the low M-OH content device exhibits good TFT characteristics.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Chemistry, Physical
Jun Jiang, Xiaojie Chai, Chao Wang, Anquan Jiang
Summary: In this study, the decay of domain wall currents with time in LiNbO3 single crystals at high temperatures was observed, showing that external charge injection suppresses intrinsic diode-like DW current. The injected charge can be removed or frozen upon cooling, and the frozen wall regions become conducting after erasure.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Engineering, Electrical & Electronic
Eui Joong Shin, Gyusoup Lee, Seongho Kim, Jun Hong Chu, Byung Jin Cho
Summary: We propose a novel memory device, named dual mechanism memory, which overcomes the limited Vth window in charge trap flash (CTF) memory. This device has a ferroelectric HfZrO(2) layer on the channel to control the conductance of the channel by remanent polarization (P-r), while trap-rich Si3N4 and tunnel SiO2 layers control the conductance by electron injection/removal. Compared to a reference memory, the dual-mechanism memory provides a wider memory window, exceeds the theoretical limit of ISPP slope, and shows improved retention characteristics.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Xiaosong Wu, Donghuan Dai, Wei Huang, Shiyu Feng, Weiguo Huang
Summary: The study found that introducing an appropriate amount of bPEI can enhance the capacitance and dielectric constant of pPFPA/bPEI cross-linked polymer dielectrics, but it may also increase leakage current and affect charge mobility.
ORGANIC ELECTRONICS
(2021)
Article
Chemistry, Applied
Chaoyue Zheng, Yihong Huan, Chao Tan, Deqing Gao
Summary: This study investigated the impact of a series of interface materials on the storage performance of nonvolatile organic field-effect transistor memory devices, revealing that the addition of lone-pair-electron atoms (N, O) between the pyridyl group and the propyl chain can enhance storage performance.
Article
Materials Science, Multidisciplinary
Jaemin Kim, Jaeun Kim, Eun-Chel Cho, Junsin Yi
Summary: The study reports an improvement in charge storage characteristics in a non-volatile memory (NVM) device using an ultraviolet-treated hafnium oxide layer. Analysis of Hf 4f and O 1s peaks through X-ray photoelectron spectroscopy was conducted, revealing defect densities after UV treatment. The memory device showed enhanced memory storage characteristics and charge retention, indicating the potential of high-efficiency TFT NVM devices using high-K materials.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2021)
Article
Engineering, Electrical & Electronic
Xinpei Jia, Jinjuan Xiang, Hao Xu, Wenjun Liu, Xiaolei Wang, Wenwu Wang
Summary: In this study, the depolarization field in ferroelectric transistors is theoretically investigated. The results show that the depolarization field increases first and then decreases with the increased interlayer thickness. The charge trapping phenomenon decreases the depolarization field and increases the threshold interlayer thickness. Therefore, the design of ferroelectric transistors should consider both the depolarization field and the memory window.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Elangbam Rameshwar Singh, Mir Waqas Alam, Naorem Khelchand Singh
Summary: The present study explores the existence of capacitive memory and forming-free resistive random access memory (RRAM) in a tantalum pentoxide (Ta2O5) thin film (TF) device. The analysis of the capacitance and voltage behavior of the Ta2O5 TF device reveals three distinctive regimes: inversion, depletion, and accumulation, which decrease with increasing frequency. This behavior is attributed to the interface state density (D (it)) and series resistance (R (s)). Furthermore, the memory window of the Ta2O5 device is found to expand from 1.2 (+/- 1 V) to 7.9 (+/- 10 V). Additionally, the resistive switching mechanism of the device demonstrates abnormal forming-free bipolar resistive switching and exhibits desirable and stable switching behavior with a resistance ratio of 10(2) and a retention time of up to 10(3) s at +2.5 V. These overall findings pave the way for potential applications of nonvolatile memory (NVM).
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Eun Seo Jo, You Seung Rim
Summary: We conducted research to create reverse synapse plasticity using metal oxide semiconductor-based field-effect transistors. By adjusting the thickness of the Ga2O3 trapping layers, we examined changes in roughness and density and confirmed the variations and mechanisms of synaptic behaviors in relation to the properties of Ga2O3. The control of charge traps as functions of pulse time, input voltage, and initialization is crucial for achieving optimal device conditions.
MATERIALS TODAY PHYSICS
(2023)
Article
Chemistry, Physical
Dencho Spassov, Albena Paskaleva, Elzbieta Guziewicz, Wojciech Wozniak, Todor Stanchev, Tsvetan Ivanov, Joanna Wojewoda-Budka, Marta Janusz-Skuza
Summary: This work investigates the application of metal/blocking oxide/high-k charge trapping layer/tunnel oxide/Si (MOHOS) structures as memory cells in charge trapping flash memories. The study focuses on the influence of post-deposition oxygen annealing and the type and thickness of tunneling oxide on memory characteristics. Results show that post-deposition oxygen annealing and tunneling oxide play a significant role in charge trapping and retention properties. Rapid thermal annealing in O-2 enhances the electron trapping and memory window, but deteriorates the retention properties. Furthermore, O-2 annealing also improves the endurance of the stacks.
Article
Engineering, Electrical & Electronic
Eran Mishuk, Andrei Ushakov, Jenny Shklovsky, Slava Krylov, Yosi Shacham-Diamand, Vladimir Ya Shur, Andrei Kholkin, Igor Lubomirsky
SENSORS AND ACTUATORS A-PHYSICAL
(2020)
Article
Materials Science, Multidisciplinary
Alexandra Inberg, Dana Ashkenazi, Giora Kimmel, Yosi Shacham-Diamand, Adin Stern
Article
Chemistry, Physical
Dana Cohen-Gerassi, Zohar A. Arnon, Tom Guterman, Aviad Levin, Moumita Ghosh, Moran Aviv, Davide Levy, Tuomas P. J. Knowles, Yosi Shacham-Diamand, Lihi Adler-Abramovich
CHEMISTRY OF MATERIALS
(2020)
Article
Nanoscience & Nanotechnology
Mario Urso, Serena Tumino, Elena Bruno, Salvo Bordonaro, Donata Marletta, Guido Ruggero Loria, Adi Avni, Yosi Shacham-Diamand, Francesco Priolo, Salvo Mirabella
ACS APPLIED MATERIALS & INTERFACES
(2020)
Article
Chemistry, Analytical
Yaron Hillman, Jenia Gershberg, Dan Lustiger, Dan Even, Dor Braverman, Yael Dror, Idan Ashur, Sefi Vernick, Neta Sal-Man, Yariv Wine
Summary: The antibiotic resistance crisis is predicted to lead to 10 million deaths annually by 2050. To address this impending challenge, the development of novel and rapid diagnostic tools is urgently needed. Through the creation of the monoclonal antibody mAb-EspB-B7, effective and stable differentiation of pathogenic bacteria is possible, showing promise as a key component in future rapid diagnostic tools.
ANALYTICAL CHEMISTRY
(2021)
Article
Engineering, Electrical & Electronic
Tali Dotan, Yuval Berg, Lorenzo Migliorini, Sara Moon Villa, Tommaso Santaniello, Paolo Milani, Yosi Shacham-Diamand
Summary: Soft and flexible microelectrodes were fabricated by integrating gold nanoparticles onto PDMS using SCBD and femtosecond laser processing. This method allows for high resolution patterning on soft substrates and is suitable for applications requiring low-current signal transmission.
MICROELECTRONIC ENGINEERING
(2021)
Article
Engineering, Electrical & Electronic
Kian Kadan-Jamal, Rakefet Ofek Almog, Junyi Zhou, Tali Dotan, Yelena Sverdlov, Ronen Dagan, Yosi Shacham-Diamand
Summary: A quick turn-around characterization approach of ultra-thin layers on low dielectric constant (Low-K) interlevel dielectric using Electrochemical Impedance Spectroscopy (EIS) is demonstrated in this work. The method proved to be effective in providing satisfactory barrier against copper transport on all substrates.
MICROELECTRONIC ENGINEERING
(2021)
Article
Engineering, Electrical & Electronic
I. Turjeman, Tali Dotan, Y. Berg, Z. Kotler, D. Sherman, Y. Shacham-Diamand
Summary: The research focuses on the mechanical analysis of thin Au/Ti film deposited on elastomer substrate, revealing that the formation of wrinkles and brittle cracks in the metallic thin film on thick elastomers can be minimized by understanding the stress distribution in the system. The study demonstrates that crack formation is related to exceeding a critical stress level in the metal film, providing insights for material selection to avoid failure. The model developed in this work can predict the potential defects in the samples integrity and define a "safe zone" for specific elastic modulus and Coefficient of Thermal Expansion values.
MICROELECTRONIC ENGINEERING
(2021)
Review
Materials Science, Multidisciplinary
Dana Ashkenazi, Alexandra Inberg, Yosi Shacham-Diamand, Adin Stern
Summary: Additive manufacturing technologies present new opportunities and challenges in low-cost manufacturing and customization of complex parts. This study reviews an environmentally friendly surface finishing process for 3D-printed AlSi10Mg parts using electroless deposition of gold, silver, and gold-silver alloy, showing satisfactory quality and potential for various AM applications.
Article
Biochemistry & Molecular Biology
Moran Aviv, Dana Cohen-Gerassi, Asuka A. Orr, Rajkumar Misra, Zohar A. Arnon, Linda J. W. Shimon, Yosi Shacham-Diamand, Phanourios Tamamis, Lihi Adler-Abramovich
Summary: Supramolecular hydrogels formed by the self-assembly of amino-acid based gelators are gaining attention in the fields of biomedicine and material science. Modifying the position of a single atom, such as fluorine, can have significant effects on the self-assembly process and physical properties of the product, demonstrating fluorination as an effective strategy to influence supramolecular organization on the nanoscale. A deep understanding of the self-assembly process may facilitate the development of optimized amino-acid-based low-molecular-weight hydrogelators for various applications.
INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES
(2021)
Article
Engineering, Electrical & Electronic
Lee Bar-On, Yosi Shacham-Diamand
Summary: This paper presents a study on in-vivo four-point impedance spectroscopy (FPIS) for plant monitoring, highlighting the impedance changes in tobacco plants under hydration/dehydration cycles. The data collected at various frequencies in a wide range posed challenges in data representation and interpretation, leading to discussions on system-oriented approaches and methods for data representation. Results show that the impedance measurements can reflect plant status, similar to traditional gravimetric measurements, suggesting potential for further device development.
IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS
(2021)
Editorial Material
Engineering, Electrical & Electronic
Danilo Demarchi, Julius Georgiou, Victor Grimblatt, Yosi Shacham-Diamand
Summary: This special issue focuses on the application of circuits and systems in innovative products for the agriculture and food value chain.
IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS
(2021)
Article
Electrochemistry
Tali Dotan, Michael Nazarenko, Yuval Atiya, Yosi Shacham-Diamand
Summary: We conducted a study on the transport effects of a microfluidic sensor-chip, where electrochemical sensing is enhanced by redox cycling using an interdigitated electrode array (IDA). We developed a comprehensive three-dimensional simulation model and a simple one-dimensional model to analyze the transition velocity between the two dominant regimes. The results show that one regime is limited by redox cycling diffusion (a unique feature of IDAs), while the other regime is limited by convection and has significant flow effects. The transition velocity between the two regimes is found to be vflow = 0.335 L[mu m] + 0.04, which matches the prediction of the one-dimensional model that vflow is proportional to 1/L.
ELECTROCHIMICA ACTA
(2023)
Article
Chemistry, Multidisciplinary
Yosi Shacham-Diamand
Summary: Modern electrochemistry plays a significant role in Micro-System-Technologies (MST), which are the foundation of global information and communication technology (ICT) driving modern life. MST encompasses disciplines like microelectronics, micro electro mechanical systems, micro-electro-optics, and microfluidics. Electrochemistry contributes to process modules, devices, and energy components in MST, providing critical technologies for advancements such as Very Large-Scale Integration copper metallization and 3D integration of circuits and systems.
ISRAEL JOURNAL OF CHEMISTRY
(2021)
Proceedings Paper
Engineering, Electrical & Electronic
Aakash Jog, Lee Bar-on, Adi Avni, Yosi Shacham-Diamand
