Charge Loss Mechanisms of Nitride-Based Charge Trap Flash Memory Devices

Comprehensive Understanding on the Role of Tunnel Oxide Top Nitridation for the Reliability of Nanoscale Flash Memory

(2013) Taehoon Kim et al.   IEEE ELECTRON DEVICE LETTERS

Threshold Voltage Fluctuations in Localized Charge-Trapping Nonvolatile Memory Devices

(2012) Meir Janai et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Flash memories: Successes and challenges

(2010) S. K. Lai   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Charge Gain, NBTI, and Random Telegraph Noise in EEPROM Flash Memory Devices

(2010) Meir Janai et al.   IEEE ELECTRON DEVICE LETTERS

Comprehensive Investigation of Statistical Effects in Nitride Memories—Part II: Scaling Analysis and Impact on Device Performance

(2010) Christian Monzio Compagnoni et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Comprehensive Investigation of Statistical Effects in Nitride Memories—Part I: Physics-Based Modeling

(2010) Aurelio Mauri et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Present and Future Non-Volatile Memories for Space

(2010) Simone Gerardin et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

High-κ related reliability issues in advanced non-volatile memories

(2010) L. Larcher et al.   MICROELECTRONICS RELIABILITY

Phase Change Memory

(2010) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Total Dose Radiation Response of NROM-Style SOI Non-Volatile Memory Elements

(2009) Bruce Draper et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Reliability issues and modeling of Flash and post-Flash memory (Invited Paper)

(2009) Daniele Ielmini   MICROELECTRONIC ENGINEERING

Unified retention model for localized charge trapping nonvolatile memory device

(2008) Asia Shapira et al.   APPLIED PHYSICS LETTERS

Cycling Effect on the Random Telegraph Noise Instabilities of nor and nand Flash Arrays

(2008) Christian Monzio Compagnoni et al.   IEEE ELECTRON DEVICE LETTERS

Future challenges of flash memory technologies

(2008) Chih-Yuan Lu et al.   MICROELECTRONIC ENGINEERING