Perovskite Oxides as Resistive Switching Memories: A Review

Effect of La3+ substitution with Gd3+ on the resistive switching properties of La0.7Sr0.3MnO3 thin films

(2014) Hong-Sub Lee et al.   APPLIED PHYSICS LETTERS

Revealing Controllable Nanowire Transformation through Cationic Exchange for RRAM Application

(2014) Chun-Wei Huang et al.   NANO LETTERS

One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications

(2013) Debashis Panda et al.   JOURNAL OF MATERIALS SCIENCE

Growth, dielectric properties, and memory device applications of ZrO2 thin films

(2013) Debashis Panda et al.   THIN SOLID FILMS

Resistive switching characteristics of nickel silicide layer embedded HfO2 film

(2012) Debashis Panda et al.   APPLIED PHYSICS LETTERS

Effect of resistive switching and electrically driven insulator-conductor transition in PbZrO3single crystals

(2012) Irena Jankowska-Sumara et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Nonvolatile resistive switching in Pr0.7Ca0.3MnO3 devices using multilayer graphene electrodes

(2011) Wootae Lee et al.   APPLIED PHYSICS LETTERS

Low temperature solution-processed graphene oxide/Pr0.7Ca0.3MnO3 based resistive-memory device

(2011) Insung Kim et al.   APPLIED PHYSICS LETTERS

Ferroelectric Polarization Effect on Al-Nb Codoped Pb(Zr0.52Ti0.48)O3/Pr0.7Ca0.3MnO3 Heterostructure Resistive Memory

(2011) El Mostafa Bourim et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Low-Power and Highly Reliable Multilevel Operation in $ \hbox{ZrO}_{2}$ 1T1R RRAM

(2011) Ming-Chi Wu et al.   IEEE ELECTRON DEVICE LETTERS

High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed $\hbox{SrZrO}_{3}$ Memory Devices

(2011) Meng-Han Lin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nonvolatile Memristive Switching Characteristics of TiO$_{\bm 2}$ Films Embedded With Nickel Nanocrystals

(2011) Debashis Panda et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Spectroscopic study on resistive switching property of perovskite manganite film with controlled oxygen deficient state

(2011) Sun Gyu Choi et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Resistive memory switching in layered oxides: AnBnO3n+2 perovskite derivatives and Bi2Sr2CaCu2O8+δ high-Tc superconductor

(2011) Y. Koval et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Continuous, Highly Flexible, and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics

(2010) Lewis Gomez De Arco et al.   ACS Nano

Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices

(2010) Ruth Muenstermann et al.   ADVANCED MATERIALS

Redox-based resistive switching in ferroelectric perovskite nanotubes

(2010) Stephen S. Nonnenmann et al.   APPLIED PHYSICS LETTERS

Filament-Type Resistive Switching in Homogeneous Bi-Layer Pr[sub 0.7]Ca[sub 0.3]MnO[sub 3] Thin Film Memory Devices

(2010) Xinjun Liu et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

PCMO Device With High Switching Stability

(2010) Yiran Chen et al.   IEEE ELECTRON DEVICE LETTERS

Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of $\hbox{SrZrO}_{3}$-Based Memory Films

(2010) Meng-Han Lin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A New Class of Charge-Trap Flash Memory With Resistive Switching Mechanisms

(2010) Ho-Myoung An et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reversible alternation between bipolar and unipolar resistive switching in polycrystalline barium strontium titanate thin films

(2010) Wan Shen et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching characteristics and mechanisms of Pt-embedded SrZrO3 memory devices

(2010) Meng-Han Lin et al.   JOURNAL OF APPLIED PHYSICS

High-speed and localized resistive switching characteristics of double-layer SrZrO3memory devices

(2010) Meng-Han Lin et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Resistance Switching in Electrodeposited Magnetite Superlattices

(2010) Jay A. Switzer et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications

(2010) Hu Young Jeong et al.   NANO LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4Thin Films

(2009) Keisuke Shibuya et al.   ADVANCED MATERIALS

Electrical properties of epitaxial SrTiO3 tunnel barriers on (001) Pt/SrTiO3 substrates

(2009) Junwoo Son et al.   APPLIED PHYSICS LETTERS

Resistive switching characteristics in Pr0.7Ca0.3MnO3 thin films on LaNiO3-electrodized Si substrate

(2009) Wen-Yuan Chang et al.   APPLIED PHYSICS LETTERS

Nonvolatile resistive switching in graphene oxide thin films

(2009) C. L. He et al.   APPLIED PHYSICS LETTERS

Nonpolar Bistable Resistive Switching Behaviors of Bismuth Titanate Oxide Thin Film

(2009) Meng-Han Lin et al.   FERROELECTRICS

Conduction Behavior of V-SrZrO3 Thin Film Showing Resistive Switching

(2009) Chun-Hung Lai et al.   FERROELECTRICS

Impact of Electrode Materials on Resistive-Switching Memory Programming

(2009) U. Russo et al.   IEEE ELECTRON DEVICE LETTERS

Resistive-Switching Characteristics of $\hbox{Al}/ \hbox{Pr}_{0.7}\hbox{Ca}_{0.3}\hbox{MnO}_{3}$ for Nonvolatile Memory Applications

(2009) Dong-Jun Seong et al.   IEEE ELECTRON DEVICE LETTERS

Resistive switching properties and low resistance state relaxation in Al/Pr0.7Ca0.3MnO3/Pt junctions

(2009) Song-Lin Li et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Resistive switching and resonant tunneling in epitaxial perovskite tunnel barriers

(2009) Junwoo Son et al.   PHYSICAL REVIEW B

Oxide Nanoelectronics on Demand

(2009) C. Cen et al.   SCIENCE

Improved charge storage characteristics of the tetralayer non-volatile memory structure using nickel nanocrystal trapping layer

(2009) Debashis Panda et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Method to distinguish ferroelectric from nonferroelectric origin in case of resistive switching in ferroelectric capacitors

(2008) H. Kohlstedt et al.   APPLIED PHYSICS LETTERS

Uniform resistive switching with a thin reactive metal interface layer in metal-La0.7Ca0.3MnO3-metal heterostructures

(2008) Musarrat Hasan et al.   APPLIED PHYSICS LETTERS

Electrode Dependence of Bipolar Resistive Switching in SrZrO[sub 3]:Cr Perovskite Film-Based Memory Devices

(2008) Jae-Wan Park et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Memory Characteristics of Nickel Nanocrystals with High-k Dielectric Tunneling Barriers

(2008) D. Panda et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Improvement of Resistive Switching Characteristics in $\hbox{SrZrO}_{3}$ Thin Films With Embedded Cr Layer

(2008) Chih-Yang Lin et al.   IEEE ELECTRON DEVICE LETTERS

Schottky Barrier Characteristics of Cobalt–Nickel Silicide/n-Si Junctions for Scaled-Si CMOS Applications

(2008) D. Panda et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

The fourth element

(2008) James M. Tour et al.   NATURE

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology

Field-induced resistance switching at metal/perovskite manganese oxide interface

(2007) I. Ohkubo et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials