Low temperature solution-processed graphene oxide/Pr0.7Ca0.3MnO3 based resistive-memory device

Nonvolatile resistive switching in Pr0.7Ca0.3MnO3 devices using multilayer graphene electrodes

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Stable Switching Characteristics of Organic Nonvolatile Memory on a Bent Flexible Substrate

(2010) Yongsung Ji et al.   ADVANCED MATERIALS

Flexible Resistive Switching Memory Device Based on Graphene Oxide

(2010) Seul Ki Hong et al.   IEEE ELECTRON DEVICE LETTERS

Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications

(2010) Hu Young Jeong et al.   NANO LETTERS

Nonvolatile resistive switching in graphene oxide thin films

(2009) C. L. He et al.   APPLIED PHYSICS LETTERS

Resistive-Switching Characteristics of $\hbox{Al}/ \hbox{Pr}_{0.7}\hbox{Ca}_{0.3}\hbox{MnO}_{3}$ for Nonvolatile Memory Applications

(2009) Dong-Jun Seong et al.   IEEE ELECTRON DEVICE LETTERS

Electrochemical Reduction of Oriented Graphene Oxide Films: An in Situ Raman Spectroelectrochemical Study

(2009) Ganganahalli K. Ramesha et al.   Journal of Physical Chemistry C

The electronic properties of graphene

(2009) A. H. Castro Neto et al.   REVIEWS OF MODERN PHYSICS

Mechanism of current hysteresis in reduced rutile TiO2 crystals for resistive memory

(2008) R. Dong et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today