Improvement of crystal quality HVPE grown GaN on an H3PO4 etched template

Advances in Bulk Crystal Growth of AlN and GaN

(2011) Dirk Ehrentraut et al.   MRS BULLETIN

Characterization of dislocation etch pits in HVPE-grown GaN using different wet chemical etching methods

(2010) Lei zhang et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Hydride vapor phase epitaxy of GaN boules using high growth rates

(2010) E. Richter et al.   JOURNAL OF CRYSTAL GROWTH

Recent Progress in GaN-Based Light-Emitting Diodes

(2009) Haiqiang Jia et al.   ADVANCED MATERIALS

Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits

(2009) J. L. Weyher et al.   APPLIED PHYSICS LETTERS

Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy

(2009) C. L. Chao et al.   APPLIED PHYSICS LETTERS

Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure

(2009) Hsin-Hsiung Huang et al.   JOURNAL OF CRYSTAL GROWTH

Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxy

(2007) V. Darakchieva et al.   JOURNAL OF CRYSTAL GROWTH