Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector

Enhancing the Infrared Photoresponse of Silicon by Controlling the Fermi Level Location within an Impurity Band

(2014) Christie B. Simmons et al.   ADVANCED FUNCTIONAL MATERIALS

Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

(2014) Jonathan P. Mailoa et al.   Nature Communications

Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon

(2013) E. García-Hemme et al.   APPLIED PHYSICS LETTERS

Double Ion Implantation and Pulsed Laser Melting Processes for Third Generation Solar Cells

(2013) Eric García-Hemme et al.   INTERNATIONAL JOURNAL OF PHOTOENERGY

Sub-Bandgap External Quantum Efficiency in Ti Implanted Si Heterojunction with Intrinsic Thin Layer Cells

(2013) Santiago Silvestre et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Extended X-ray absorption fine structure spectroscopy of selenium-hyperdoped silicon

(2013) Bonna K. Newman et al.   JOURNAL OF APPLIED PHYSICS

Deactivation of metastable single-crystal silicon hyperdoped with sulfur

(2013) C. B. Simmons et al.   JOURNAL OF APPLIED PHYSICS

Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si

(2013) J. Olea et al.   JOURNAL OF APPLIED PHYSICS

Methodology for vetting heavily doped semiconductors for intermediate band photovoltaics: A case study in sulfur-hyperdoped silicon

(2013) J. T. Sullivan et al.   JOURNAL OF APPLIED PHYSICS

Electrical decoupling effect on intermediate band Ti-implanted silicon layers

(2013) D Pastor et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Broadband high photoresponse from pure monolayer graphene photodetector

(2013) By Yongzhe Zhang et al.   Nature Communications

Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting

(2012) Daniel Recht et al.   APPLIED PHYSICS LETTERS

Sub-bandgap spectral photo-response analysis of Ti supersaturated Si

(2012) E. García-Hemme et al.   APPLIED PHYSICS LETTERS

Nonradiative lifetimes in intermediate band photovoltaics—Absence of lifetime recovery

(2012) Jacob J. Krich et al.   JOURNAL OF APPLIED PHYSICS

Bridging the mid-infrared-to-telecom gap with silicon nanophotonic spectral translation

(2012) Xiaoping Liu et al.   Nature Photonics

Understanding intermediate-band solar cells

(2012) Antonio Luque et al.   Nature Photonics

Insulator to metallic transition due to intermediate band formation in Ti-implanted silicon

(2012) D. Pastor et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur

(2011) J. T. Sullivan et al.   APPLIED PHYSICS LETTERS

Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes

(2011) Aurore J. Said et al.   APPLIED PHYSICS LETTERS

Sub-bandgap absorption in Ti implanted Si over the Mott limit

(2011) J. Olea et al.   JOURNAL OF APPLIED PHYSICS

Engineering the Electronic Band Structure for Multiband Solar Cells

(2011) N. López et al.   PHYSICAL REVIEW LETTERS

Insulator-to-Metal Transition in Sulfur-Doped Silicon

(2011) Mark T. Winkler et al.   PHYSICAL REVIEW LETTERS

High quality Ti-implanted Si layers above the Mott limit

(2010) J. Olea et al.   JOURNAL OF APPLIED PHYSICS

Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material

(2009) E. Antolín et al.   APPLIED PHYSICS LETTERS