Insulator-to-Metal Transition in Sulfur-Doped Silicon

Engineering the Electronic Band Structure for Multiband Solar Cells

(2011) N. López et al.   PHYSICAL REVIEW LETTERS

Fabrication and subband gap optical properties of silicon supersaturated with chalcogens by ion implantation and pulsed laser melting

(2010) Brion P. Bob et al.   JOURNAL OF APPLIED PHYSICS

Formation of a reliable intermediate band in Si heavily coimplanted with chalcogens (S, Se, Te) and group III elements (B, Al)

(2010) K. Sánchez et al.   PHYSICAL REVIEW B

The role of diffusion in broadband infrared absorption in chalcogen-doped silicon

(2009) Brian R. Tull et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Fabrication and sub-band-gap absorption of single-crystal Si supersaturated with Se by pulsed laser mixing

(2009) Malek Tabbal et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Intermediate-band photovoltaic solar cell based on ZnTe:O

(2009) Weiming Wang et al.   APPLIED PHYSICS LETTERS

Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material

(2009) E. Antolín et al.   APPLIED PHYSICS LETTERS