Sub-bandgap absorption in Ti implanted Si over the Mott limit

High quality Ti-implanted Si layers above the Mott limit

(2010) J. Olea et al.   JOURNAL OF APPLIED PHYSICS

Fabrication and subband gap optical properties of silicon supersaturated with chalcogens by ion implantation and pulsed laser melting

(2010) Brion P. Bob et al.   JOURNAL OF APPLIED PHYSICS

Thermal stability of intermediate band behavior in Ti implanted Si

(2010) J. Olea et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Fabrication and sub-band-gap absorption of single-crystal Si supersaturated with Se by pulsed laser mixing

(2009) Malek Tabbal et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Intermediate-band photovoltaic solar cell based on ZnTe:O

(2009) Weiming Wang et al.   APPLIED PHYSICS LETTERS

Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material

(2009) E. Antolín et al.   APPLIED PHYSICS LETTERS

Electronic transport properties of Ti-impurity band in Si

(2009) J Olea et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Intermediate band mobility in heavily titanium-doped silicon layers

(2009) G. Gonzalez-Díaz et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions

(2008) J. F. Geisz et al.   APPLIED PHYSICS LETTERS

Titanium doped silicon layers with very high concentration

(2008) J. Olea et al.   JOURNAL OF APPLIED PHYSICS

Fabrication of high aspect ratio metal nanotips by nanosecond pulse laser melting

(2008) Bo Cui et al.   NANOTECHNOLOGY