Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si

Sub-bandgap spectral photo-response analysis of Ti supersaturated Si

(2012) E. García-Hemme et al.   APPLIED PHYSICS LETTERS

Insulator to metallic transition due to intermediate band formation in Ti-implanted silicon

(2012) D. Pastor et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Depth profile study of Ti implanted Si at very high doses

(2011) J. Olea et al.   JOURNAL OF APPLIED PHYSICS

Sub-bandgap absorption in Ti implanted Si over the Mott limit

(2011) J. Olea et al.   JOURNAL OF APPLIED PHYSICS

Two-layer Hall effect model for intermediate band Ti-implanted silicon

(2011) J. Olea et al.   JOURNAL OF APPLIED PHYSICS

Insulator-to-Metal Transition in Sulfur-Doped Silicon

(2011) Mark T. Winkler et al.   PHYSICAL REVIEW LETTERS

High quality Ti-implanted Si layers above the Mott limit

(2010) J. Olea et al.   JOURNAL OF APPLIED PHYSICS

Formation of a reliable intermediate band in Si heavily coimplanted with chalcogens (S, Se, Te) and group III elements (B, Al)

(2010) K. Sánchez et al.   PHYSICAL REVIEW B

Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives

(2010) Maurizio Casalino et al.   SENSORS

The Intermediate Band Solar Cell: Progress Toward the Realization of an Attractive Concept

(2009) Antonio Luque et al.   ADVANCED MATERIALS

Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material

(2009) E. Antolín et al.   APPLIED PHYSICS LETTERS

Electronic transport properties of Ti-impurity band in Si

(2009) J Olea et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Assessment through first-principles calculations of an intermediate-band photovoltaic material based on Ti-implanted silicon: Interstitial versus substitutional origin

(2009) K. Sánchez et al.   PHYSICAL REVIEW B

Intermediate band mobility in heavily titanium-doped silicon layers

(2009) G. Gonzalez-Díaz et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS