Bow Free 4 Diameter 3C-SiC Epilayers Formed upon Wafer-Bonded Si/SiC Substrates

The physical and electrical properties of 4-inch 3C-SiC epitaxial layers, deposited on Si (111) wafers, which were wafer bonded to polycrystalline silicon carbide carrier wafers, are presented. We show that this novel Si/SiC wafer bonding process leads to reduced wafer bow, confirmed by imaging, in the form of optical microscopy (x100 objective lens) together with a digital camera. All 3C-SiC layers grown above Si/SiC structures by conventional chemical vapor deposition techniques are shown to be single crystal in nature. 3C-SiC metal oxide semiconductor capacitors have been fabricated via thermal oxidation at 1100 degrees C in pure oxygen for 90 minutes, with a density of interface states measured at similar to 2 x 10(11) cm(-2) eV(-1) at 0.2 eV beneath the conduction band edge. These structures have the potential to realize thick, bow-free 3C-SiC layers suitable for power device fabrication. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.007206ssl] All rights reserved.