Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3099018
Keywords
elemental semiconductors; interface states; MIS capacitors; oxidation; semiconductor heterojunctions; semiconductor thin films; silicon; silicon compounds
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Funding
- UK DTI [TP/3/OPT/6/I/17311]
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This paper describes the thermal oxidation of Si/SiC heterojunction structures, produced using a layer-transfer process, as an alternative solution to fabricating SiC metal-oxide-semiconductor (MOS) devices with lower interface state densities (D-it). Physical characterization demonstrate that the transferred Si layer is relatively smooth, uniform, and essentially monocrystalline. The Si on SiC has been totally or partially thermally oxidized at 900-1150 degrees C. D-it for both partially and completely oxidized silicon layers on SiC were significantly lower than D-it values for MOS capacitors fabricated via conventional thermal oxidation of SiC. The quality of the SiO2, formed by oxidation of a wafer-bonded silicon layer reported here has the potential to realize a number of innovative heterojunction concepts and devices, including the fabrication of high quality and reliable SiO2 gate oxides.
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