Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2983648
Keywords
-
Categories
Funding
- ONR
Ask authors/readers for more resources
GaAs/GaN pn heterojunction diodes have been fabricated by direct wafer fusion and characterized by capacitance-voltage (C-V) measurements and temperature dependent current-voltage (I-V) measurements. The wafer-fused pn diode showed a good rectifying behavior, but a small turn-on voltage was observed, which was attributed to defect-assisted tunneling-recombination. The flat-band voltage extracted from C-V is around 0.46 V, much smaller than the built-in voltage calculated for an ideal GaAs/GaN pn heterojunction. A band diagram including interface charge effects together with a possible energy barrier, stemming from a layer of disordered material at the fused GaAs/GaN interface, has been proposed to explain the experimental observations. (C) 2008 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available