Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics

Title
Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 18, Pages 182102
Publisher
AIP Publishing
Online
2008-11-04
DOI
10.1063/1.3013842

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