Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory

Investigation on the Response of TaO$_{\rm x}$-based Resistive Random-Access Memories to Heavy-Ion Irradiation

(2014) Fei Tan et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Total-Ionizing-Dose Effects on the Resistance Switching Characteristics of Chalcogenide Programmable Metallization Cells

(2014) Y. Gonzalez-Velo et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

The Impact of X-Ray and Proton Irradiation on ${\rm HfO}_2/{\rm Hf}$-Based Bipolar Resistive Memories

(2014) J. S. Bi et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Displacement Damage in TiO $_{2}$ Memristor Devices

(2013) E. DeIonno et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Radiation Effects in Flash Memories

(2013) S. Gerardin et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices

(2013) Y. S. Lin et al.   JOURNAL OF APPLIED PHYSICS

On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology

(2012) Ximeng Guan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Initial Assessment of the Effects of Radiation on the Electrical Characteristics of ${\rm TaO}_{\rm x}$ Memristive Memories

(2012) M. J. Marinella et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

(2011) Daniele Ielmini   IEEE TRANSACTIONS ON ELECTRON DEVICES

Total Ionizing Dose (TID) Effects on $\hbox{TaO}_{x}$ -Based Resistance Change Memory

(2011) Lijie Zhang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact of Alpha Particles on the Electrical Characteristics of TiO$_{2}$ Memristors

(2011) H. J. Barnaby et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Highly Stable Radiation-Hardened Resistive-Switching Memory

(2010) Yan Wang et al.   IEEE ELECTRON DEVICE LETTERS

Radiation Hardness of ${\rm TiO}_{2}$ Memristive Junctions

(2010) William M. Tong et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Proton-based total-dose irradiation effects on Cu/HfO2:Cu/Pt ReRAM devices

(2010) Brian Butcher et al.   NANOTECHNOLOGY

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

(2009) Bin Gao et al.   IEEE ELECTRON DEVICE LETTERS

Resistance switching properties of planner Ag/Li:NiO/Ag structures induced by swift heavy ion irradiation

(2009) U. S. Joshi et al.   JOURNAL OF APPLIED PHYSICS