Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

Normally-OFF Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V)

(2014) Joseph J. Freedsman et al.   Applied Physics Express

Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs

(2014) Ting-Hsiang Hung et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type GaN Cap Layer

(2014) Liang-Yu Su et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

(2013) Yuhao Zhang et al.   APPLIED PHYSICS LETTERS

Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique

(2013) Zhe Xu et al.   IEEE ELECTRON DEVICE LETTERS

600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

(2013) Zhikai Tang et al.   IEEE ELECTRON DEVICE LETTERS

Performance of Fully Recessed AlGaN/GaN MOSFET Prepared on GaN Buffer Layer Grown With AlSiC Precoverage on Silicon Substrate

(2013) Jae-Hoon Lee et al.   IEEE ELECTRON DEVICE LETTERS

Recessed-Gate Enhancement-Mode GaN MOSFETs With a Double-Insulator Gate Providing 10-MHz Switching Operation

(2013) Junichi Kashiwagi et al.   IEEE ELECTRON DEVICE LETTERS

AlN barrier HFETs with AlGaN channels to shift the threshold voltage to higher positive values: a proposal

(2013) Herwig Hahn et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Gallium nitride devices for power electronic applications

(2013) B Jayant Baliga   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

(2011) Satyaki Ganguly et al.   APPLIED PHYSICS LETTERS

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

(2011) Rongming Chu et al.   IEEE ELECTRON DEVICE LETTERS

Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage

(2010) C.-T. Chang et al.   ELECTRONICS LETTERS

Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

(2010) M. Kanamura et al.   IEEE ELECTRON DEVICE LETTERS

Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors

(2008) Takuma Nanjo et al.   APPLIED PHYSICS LETTERS

AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit

(2008) Ajay Raman et al.   JAPANESE JOURNAL OF APPLIED PHYSICS