- Home
- Publications
- Publication Search
- Publication Details
Title
AgInSbTe memristor with gradual resistance tuning
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 18, Pages 183513
Publisher
AIP Publishing
Online
2013-05-11
DOI
10.1063/1.4804983
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Ultrafast Synaptic Events in a Chalcogenide Memristor
- (2013) Yi Li et al. Scientific Reports
- Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor
- (2012) Zhong Qiang Wang et al. ADVANCED FUNCTIONAL MATERIALS
- Multi-state resistive switching memory with secure information storage in Au/BiFe0.95Mn0.05O3/La5/8Ca3/8MnO3 heterostructure
- (2012) Y. P. Yao et al. APPLIED PHYSICS LETTERS
- Bipolar and tri-state unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt memory devices
- (2012) Wei Hu et al. APPLIED PHYSICS LETTERS
- Memristor Resistance Modulation for Analog Applications
- (2012) Tsung-Wen Lee et al. IEEE ELECTRON DEVICE LETTERS
- Coexistence of unipolar and bipolar resistive switching in BiFeO3 and Bi0.8Ca0.2FeO3 films
- (2012) Lu Liu et al. JOURNAL OF APPLIED PHYSICS
- Electrode Materials for Ge2Sb2Te5-Based Memristors
- (2012) Q. Wang et al. JOURNAL OF ELECTRONIC MATERIALS
- High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm
- (2012) Fabien Alibart et al. NANOTECHNOLOGY
- Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces
- (2012) Ilia Valov et al. NATURE MATERIALS
- Two- and Three-Terminal Resistive Switches: Nanometer-Scale Memristors and Memistors
- (2011) Qiangfei Xia et al. ADVANCED FUNCTIONAL MATERIALS
- A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors
- (2011) An Quan Jiang et al. ADVANCED MATERIALS
- Spectromicroscopy of tantalum oxide memristors
- (2011) John Paul Strachan et al. APPLIED PHYSICS LETTERS
- Effect of interfacial oxide layer on the switching uniformity of Ge2Sb2Te5-based resistive change memory devices
- (2011) Jiyong Woo et al. APPLIED PHYSICS LETTERS
- Sensory and short-term memory formations observed in a Ag2S gap-type atomic switch
- (2011) Takeo Ohno et al. APPLIED PHYSICS LETTERS
- Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films
- (2011) Can Wang et al. APPLIED PHYSICS LETTERS
- Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory
- (2011) Shimeng Yu et al. APPLIED PHYSICS LETTERS
- On the stochastic nature of resistive switching in Cu doped Ge0.3Se0.7 based memory devices
- (2011) R. Soni et al. JOURNAL OF APPLIED PHYSICS
- From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials
- (2011) Toshiyuki Matsunaga et al. NATURE MATERIALS
- High switching endurance in TaOx memristive devices
- (2010) J. Joshua Yang et al. APPLIED PHYSICS LETTERS
- Nanoscale Memristor Device as Synapse in Neuromorphic Systems
- (2010) Sung Hyun Jo et al. NANO LETTERS
- Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structures
- (2010) Kyung Min Kim et al. NANOTECHNOLOGY
- ‘Memristive’ switches enable ‘stateful’ logic operations via material implication
- (2010) Julien Borghetti et al. NATURE
- Polarity-dependent resistance switching in GeSbTe phase-change thin films: The importance of excess Sb in filament formation
- (2009) Ramanathaswamy Pandian et al. APPLIED PHYSICS LETTERS
- Electrical field induced precipitation reaction and percolation in Ag30Ge17Se53 amorphous electrolyte films
- (2009) Liang Chen et al. APPLIED PHYSICS LETTERS
- Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7Thin Films without Phase Transformation
- (2009) Sun Hua-Jun et al. CHINESE PHYSICS LETTERS
- Optical nonlinear absorption characteristics of AgInSbTe phase change thin films
- (2009) Jing Liu et al. JOURNAL OF APPLIED PHYSICS
- Memristor−CMOS Hybrid Integrated Circuits for Reconfigurable Logic
- (2009) Qiangfei Xia et al. NANO LETTERS
- Fast switching behavior of nanoscale Ag6In5Sb59Te30based nanopillar type phase change memory
- (2009) Sung-Hoon Hong et al. NANOTECHNOLOGY
- Resistive Switching and Metallic-Filament Formation in Ag2S Nanowire Transistors
- (2009) Zhi-Min Liao et al. Small
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
- Memristive switching mechanism for metal/oxide/metal nanodevices
- (2008) J. Joshua Yang et al. Nature Nanotechnology
- Spin memristive systems: Spin memory effects in semiconductor spintronics
- (2008) Yu. V. Pershin et al. PHYSICAL REVIEW B
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search