Electrode Materials for Ge2Sb2Te5-Based Memristors

Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D stackable and embedded applications

(2011) Ru Huang et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Metal/TiO2 interfaces for memristive switches

(2011) J. Joshua Yang et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Resistive switching behavior in a Ni–Ag2Se–Ni nanowire

(2011) N. J. Lee et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Effect of interfacial oxide layer on the switching uniformity of Ge2Sb2Te5-based resistive change memory devices

(2011) Jiyong Woo et al.   APPLIED PHYSICS LETTERS

A non-filamentary model for unipolar switching transition metal oxide resistance random access memories

(2011) Kan-Hao Xue et al.   JOURNAL OF APPLIED PHYSICS

Polar Charges Induced Electric Hysteresis of ZnO Nano/Microwire for Fast Data Storage

(2011) Jinhui Song et al.   NANO LETTERS

The switching location of a bipolar memristor: chemical, thermal and structural mapping

(2011) John Paul Strachan et al.   NANOTECHNOLOGY

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices

(2010) Hu Young Jeong et al.   ADVANCED FUNCTIONAL MATERIALS

Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching

(2010) J. Joshua Yang et al.   ADVANCED MATERIALS

Direct Identification of the Conducting Channels in a Functioning Memristive Device

(2010) John Paul Strachan et al.   ADVANCED MATERIALS

Dopant Control by Atomic Layer Deposition in Oxide Films for Memristive Switches

(2010) J. Joshua Yang et al.   CHEMISTRY OF MATERIALS

Cost-effective fabrication of nanoscale electrode memristors with reproducible electrical response

(2010) K. Michelakis et al.   Micro & Nano Letters

Electrochemical Control of the Conductivity in an Organic Memristor: A Time-Resolved X-ray Fluorescence Study of Ionic Drift as a Function of the Applied Voltage

(2009) Tatiana Berzina et al.   ACS Applied Materials & Interfaces

High-Density Crossbar Arrays Based on a Si Memristive System

(2009) Sung Hyun Jo et al.   NANO LETTERS

Memory Switching Characteristics in Amorphous Ga2Se3 Films

(2008) A.E. Bekheet   JOURNAL OF ELECTRONIC MATERIALS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology