Multi-state resistive switching memory with secure information storage in Au/BiFe0.95Mn0.05O3/La5/8Ca3/8MnO3 heterostructure

Magnetotransport at Domain Walls inBiFeO3

(2012) Q. He et al.   PHYSICAL REVIEW LETTERS

A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors

(2011) An Quan Jiang et al.   ADVANCED MATERIALS

High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3

(2011) Zhibo Yan et al.   ADVANCED MATERIALS

Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films

(2011) Can Wang et al.   APPLIED PHYSICS LETTERS

Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films

(2011) Da-Shan Shang et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Conduction through 71° Domain Walls inBiFeO3Thin Films

(2011) S. Farokhipoor et al.   PHYSICAL REVIEW LETTERS

Unipolar resistive switching effect in YMn1−δO3 thin films

(2010) Z. B. Yan et al.   APPLIED PHYSICS LETTERS

Ultrafast resistive switching in SrTiO3:Nb single crystal

(2010) X. T. Zhang et al.   APPLIED PHYSICS LETTERS

Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

(2010) L. Goux et al.   JOURNAL OF APPLIED PHYSICS

Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches

(2010) Mi Li et al.   NANOTECHNOLOGY

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Unipolar resistive switching behavior of BiFeO3 thin films prepared by chemical solution deposition

(2010) Shih-Wei Chen et al.   THIN SOLID FILMS

Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4Thin Films

(2009) Keisuke Shibuya et al.   ADVANCED MATERIALS

Fabrication of epitaxial nanostructured ferroelectrics and investigation of their domain structures

(2009) H. Han et al.   JOURNAL OF MATERIALS SCIENCE

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

(2008) Wen-Yuan Chang et al.   APPLIED PHYSICS LETTERS

Effect of epitaxial strain on ferroelectric polarization in multiferroic BiFeO[sub 3] films

(2008) Dae Ho Kim et al.   APPLIED PHYSICS LETTERS

Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere

(2008) Doo Seok Jeong et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution

(2008) I. H. Inoue et al.   PHYSICAL REVIEW B