Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6

(2013) S. Wirths et al.   SOLID-STATE ELECTRONICS

Reduced Pressure CVD Growth of Ge and Ge1−xSnxAlloys

(2013) S. Wirths et al.   ECS Journal of Solid State Science and Technology

Compositional dependence of the absorption edge and dark currents in Ge1−x−ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si4H10, and SnD4

(2012) R. T. Beeler et al.   APPLIED PHYSICS LETTERS

Barrier-Engineered Arsenide–Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current

(2012) D. Mohata et al.   IEEE ELECTRON DEVICE LETTERS

Electronic band structure and effective mass parameters of Ge1-xSnx alloys

(2012) Kain Lu Low et al.   JOURNAL OF APPLIED PHYSICS

The direct and indirect bandgaps of unstrained SixGe1−x−ySny and their photonic device applications

(2012) P. Moontragoon et al.   JOURNAL OF APPLIED PHYSICS

Electronic properties calculation of Ge1−x−ySixSny ternary alloy and nanostructure

(2012) Pairot Moontragoon et al.   JOURNAL OF NON-CRYSTALLINE SOLIDS

Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy

(2011) Robert Chen et al.   APPLIED PHYSICS LETTERS

Impact of field-induced quantum confinement in tunneling field-effect devices

(2011) William G. Vandenberghe et al.   APPLIED PHYSICS LETTERS

Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

(2011) Kuo-Hsing Kao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Tunnel field-effect transistors as energy-efficient electronic switches

(2011) Adrian M. Ionescu et al.   NATURE

High quality relaxed Ge layers grown directly on a Si(001) substrate

(2011) V.A. Shah et al.   SOLID-STATE ELECTRONICS

Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser

(2010) G. Sun et al.   JOURNAL OF APPLIED PHYSICS

Tunable Optical Gap at a Fixed Lattice Constant in Group-IV Semiconductor Alloys

(2009) V. R. D’Costa et al.   PHYSICAL REVIEW LETTERS

Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1); Ge surface passivation by Si

(2009) J M Hartmann et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Growth of highly tensile-strained Ge on relaxed InxGa1−xAs by metal-organic chemical vapor deposition

(2008) Yu Bai et al.   JOURNAL OF APPLIED PHYSICS