Electronic band structure and effective mass parameters of Ge1-xSnx alloys

Investigation of the direct band gaps in Ge1−xSnx alloys with strain control by photoreflectance spectroscopy

(2012) Hai Lin et al.   APPLIED PHYSICS LETTERS

Raman study of strained Ge1−xSnx alloys

(2011) Hai Lin et al.   APPLIED PHYSICS LETTERS

Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy

(2011) Robert Chen et al.   APPLIED PHYSICS LETTERS

Electronic structure of SnxGe1−x alloys for small Sn compositions: Unusual structural and electronic properties

(2010) Y. Chibane et al.   JOURNAL OF APPLIED PHYSICS

Theoretical gain of strained GeSn0.02/Ge1−x−y′SixSny′ quantum well laser

(2010) Yuan-Hui Zhu et al.   JOURNAL OF APPLIED PHYSICS

Electronic band structure calculations for biaxially strained Si, Ge, and III–V semiconductors

(2010) Jiseok Kim et al.   JOURNAL OF APPLIED PHYSICS

Electronic structure and optical properties of Sn and SnGe quantum dots

(2008) Pairot Moontragoon et al.   JOURNAL OF APPLIED PHYSICS

Origin of the unusually large band-gap bowing and the breakdown of the band-edge distribution rule in theSnxGe1−xalloys

(2008) Wan-Jian Yin et al.   PHYSICAL REVIEW B