Improvement of InGaZnO4Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing

Published 2009 View Full Article

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Title
Improvement of InGaZnO4Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing
Authors
Keywords
-
Journal
Applied Physics Express
Volume 2, Issue -, Pages 021102
Publisher
IOP Publishing
Online
2009-02-07
DOI
10.1143/apex.2.021102

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