Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer

Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition

(2012) P. Kordoš et al.   APPLIED PHYSICS LETTERS

Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer

(2011) F. Ji et al.   APPLIED PHYSICS LETTERS

Interface engineering with an MOCVD grown ZnO interface passivation layer for ZrO2–GaAs metal–oxide–semiconductor devices

(2011) Souvik Kundu et al.   SOLID STATE COMMUNICATIONS

Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing

(2010) Y. C. Chang et al.   APPLIED PHYSICS LETTERS

Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high-k HfO2 gate dielectric by using La2O3 interlayer sputtered with/without N2 ambient

(2010) H. X. Xu et al.   APPLIED PHYSICS LETTERS

Improved thermal stability of Al2O3/HfO2/Al2O3 high-k gate dielectric stack on GaAs

(2010) Dong Chan Suh et al.   APPLIED PHYSICS LETTERS

Improved Interfacial Properties of Ge MOS Capacitor With High-k Dielectric by Using TaON/GeON Dual Interlayer

(2010) F. Ji et al.   IEEE ELECTRON DEVICE LETTERS

H plasma cleaning and a-Si passivation of GaAs for surface channel device applications

(2009) C. Marchiori et al.   JOURNAL OF APPLIED PHYSICS

Improved Electrical Properties of Ge p-MOSFET With $ \hbox{HfO}_{2}$ Gate Dielectric by Using $\hbox{TaO}_{x} \hbox{N}_{y}$ Interlayer

(2008) J.P. Xu et al.   IEEE ELECTRON DEVICE LETTERS