Improved Electrical Properties of Ge p-MOSFET With $ \hbox{HfO}_{2}$ Gate Dielectric by Using $\hbox{TaO}_{x} \hbox{N}_{y}$ Interlayer

Authors

Keywords

Journal

Volume 29, Issue 10, Pages 1155-1158

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2008-09-19

DOI

10.1109/led.2008.2004282

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