Interface engineering with an MOCVD grown ZnO interface passivation layer for ZrO2–GaAs metal–oxide–semiconductor devices

Published 2011 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Interface engineering with an MOCVD grown ZnO interface passivation layer for ZrO2–GaAs metal–oxide–semiconductor devices
Authors
Keywords
-
Journal
SOLID STATE COMMUNICATIONS
Volume 151, Issue 24, Pages 1881-1884
Publisher
Elsevier BV
Online
2011-10-14
DOI
10.1016/j.ssc.2011.09.033

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.