Improved Interfacial Properties of Ge MOS Capacitor With High-k Dielectric by Using TaON/GeON Dual Interlayer

Published 2010 View Full Article

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Title
Improved Interfacial Properties of Ge MOS Capacitor With High-k Dielectric by Using TaON/GeON Dual Interlayer
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 2, Pages 122-124
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-12-23
DOI
10.1109/led.2010.2092749
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